• INFRARED
  • Vol. 41, Issue 11, 17 (2020)
Tao DONG*, Chao ZHAO, Wei BAI, Chen SHEN, and QING WU
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1672-8785.2020.11.003 Cite this Article
    DONG Tao, ZHAO Chao, BAI Wei, SHEN Chen, WU QING. Study on Electrical Uniformity of InSb Wafer[J]. INFRARED, 2020, 41(11): 17 Copy Citation Text show less
    References

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    [6] Levan P D, Sood A K, Wijewarnasuriya P, et al. Interface and Facet Control during Czochralski Growth of (111) InSb Crystals for Cost Reduction and Yield Improvement of IR Focal Plane Array Substrates [C]. SPIE, 2014, 9220:922003.

    [7] Wu X L, Zhang K F, Huang Y M, et al. Recombination Lifetime Characterization and Mapping of p-i-n In P/In0.53Ga0.47As/InP Mesa Structure Using the Microwave Photoconductivity Decay (μ-PCD) Technique [C]. SPIE, 2008, 6221: 62211C.

    DONG Tao, ZHAO Chao, BAI Wei, SHEN Chen, WU QING. Study on Electrical Uniformity of InSb Wafer[J]. INFRARED, 2020, 41(11): 17
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