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Journals >Chinese Journal of Lasers >Volume 20 >Issue 6 >Page 413 > Article

Chinese Journal of Lasers
Vol. 20, Issue 6, 413 (1993)

Single-quantum-well GaAs/AlGaAs lasers

[in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Single-quantum-well GaAs/AlGaAs lasers[J]. Chinese Journal of Lasers, 1993, 20(6): 413 Copy Citation Text

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Abstract

Single- quantum-well GaAs/AlGaAs laser with graded- index separate confinement heterostructure (GRIN-SCH-SQW) were fabricated by molecular beam epitaxy. The laser exhibits low threshold current and single mode operation performances. 55 mW/facet CW output power has been obtained.

Keywords

GaAs/AlGaAs molecular beam epitaxy single-quantum-well

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Single-quantum-well GaAs/AlGaAs lasers[J]. Chinese Journal of Lasers, 1993, 20(6): 413

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