• Chinese Journal of Lasers
  • Vol. 22, Issue 11, 865 (1995)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research of the Integral Photonic“Transistor”Models---New Application of Absorption Nonlinear Physics[J]. Chinese Journal of Lasers, 1995, 22(11): 865 Copy Citation Text show less

    Abstract

    A concept about a new kind of nitegral photonic "transistor", using saturation absorption nonlinearity of the wead saturation optical intensity parameter of photochromic material, is put forward in this peper. A series of parallel absorption nonlinear photonic device models are constructed. Their property is studied and analysed carefully and their probable application is simply discussed.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research of the Integral Photonic“Transistor”Models---New Application of Absorption Nonlinear Physics[J]. Chinese Journal of Lasers, 1995, 22(11): 865
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