The Er3+-doped Al2O3 optical films have been prepared on the thermally oxidized SiO/Si (100) substrate by the Er ion implantation Al2O3 films, which were obtained by the sol-gel method with a clipping-coating technique, using the aluminium isopropoxide [Al(OC3H7)3]-derived ΑΙΑ sols. The phase structure, mixture of γ-(Al,Er)2O3 and θ-(Αl,Εr)2O3, was observed for the Er3+-doped Al2O3 films sintered at 900 V. The photoluminescence (PL) spectrum centered at 1.533 μm with the full width at half-maximum (FWHM) of 44 nm was observed for the Er3+-doped Al2O3 film with the Er ion implantation fluence of 4×1016 cm, which attributed to the intra-4f transition between the first excited (4I13/2) and the ground state (4I25/3) of Er3+. The PL intensity at 1.533 μm increased with increasing the Er ion implantation fluence from 0.2×1016 cm-2 to 4×1016 cm-2 for the Er3+-doped Al2O3 films sintered at 900 When the sintering temperature was increased to 1200 ℃, the PL intensity at 1.533 μm first increased, and then decreased with increasing the Er ion implantation fluence from 0.2×1016 cm-2 to 4×l016 cm-2.