To summarize, a facile zirconium oxide precursor and annealing process are developed. First, the poor formation of zirconia film is resolved by introducing a new ligand, oleic acid. Second, UV/IR irradiation is used to anneal the zirconium salt. Compared with the traditional thermal annealing, the novel annealing method via UV/IR irradiation can make the zirconium salt with oleic acid undergo decomposition, reduction, and oxidation, forming high-quality ZrO_x films. The prepared ZrO_x films are characterized and compared with those synthesized via thermal annealing process using UV spectrometer, AFM, and XPS. The results show that ZrO_x films with UV/IR light annealing at low temperature (<120 ℃) are successfully prepared. Moreover, the optical and electrical properties of ZrO_x films with UV/IR light annealing are better than those of the ZrO_x films treated with thermal annealing. Our study demonstrates that the ZrO_x film fabricated by our facile precursor and UV/IR annealing can potentially be used in the fields of flexible electronic and optoelectronic devices.