• Chinese Journal of Lasers
  • Vol. 23, Issue 2, 135 (1996)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optically Addressed Spatial Light Modulator Using an α-Si: H pin photodiode[J]. Chinese Journal of Lasers, 1996, 23(2): 135 Copy Citation Text show less

    Abstract

    We report the fabrication and operation of an optically addressed spatial light modulator(OASLM), consisting of a hydrogenated amorphous silicon (α-Si: H) pin photodiode as a photosensor and a twist nematic liquid crystal(TNLC) as the modulating material. The intrinsic and doped α-Si: H films are deposited continuously by pECVD method in a reaction chamber with a shutter. The optical measurement indicates that the OASLM has a resolution of at least 20 lp/mm. The contrast ratio under the 300 lux illumination of white light is higher than 25:1. The white light writing sensitivity is about 3 lux.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optically Addressed Spatial Light Modulator Using an α-Si: H pin photodiode[J]. Chinese Journal of Lasers, 1996, 23(2): 135
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