[4] Zhu L Q, Huang J, Xie Z H, et al. Low-frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors[J]. IEEE Transactions on Electron Devices, 2020, 67(2): 547551.
[5] Feng B, Zhu J Y, Lu B R, et al. Achieving Infrared Detection by All-Si Plasmonic Hot-electron Detectors with High Detectivity[J]. ACS Nano, 2019, 13(7): 84338441.
[6] Xia H, Li T X, Tang H J, et al. Nanoscale Imaging of the Photoresponse in PN Junctions of InGaAs Infrared Detector[J]. Scientific Reports, 2016, 6: 21544.
[7] Tsuchikawa T, Kaneda H, Ishihara D, et al. Pixel-based Spectral Characterization of Mid-infrared Si Array Detectors for Astronomical Observation in Space[J]. Publication of the Astronomical Society of the Pacific, 2020, 132: 074502.
[9] Xiao Y H, Zhen H. Pedestrian Crowd Detection Based Unmanned Aerial Vehicle Infrared Imagery[J]. Applied Machanics and Materials, 2017, 873: 347352.
[10] Achouche M, Glastre G, Caillaud C, et al. InGaAs Communication Photodiodes: from Low-to High-power-level Designs[J]. IEEE Photonics Journal, 2010, 2(3): 460468.
[11] Bauer J G, Albrecht H, Hoffmann L, et al. Lo-cally Ion-implanted JFET in an InGaAs/InP pin Photodiode Layer Structure for a Monolithically Planar Integrated Receiver OEIC[J]. IEEE Photonics Technology Letter, 1992, 4(3): 253255.
[12] Zang J Z, Morgan J S, Xie X J, et al. InP/InGaAs Photovaractor[J]. Journal of Lightwave Technology, 2018, 36(9): 16611665.
[13] ATLAS User′s Manual[M]. Santa Clara: Silvaco International, 2015.
[14] Wang Y D, Chen J, Xu J T, et al. Modeling of Frequency-dependent Negative Differential Capacitance in InGaAs/InP Photodiode[J]. Infrared Physics and Technology, 2018, 89: 4145.
