• Chinese Optics Letters
  • Vol. 2, Issue 12, 12708 (2004)
Qinghua Xue1、2, Quan Zheng1, Yikun Bu1、2, and Longsheng Qian1
Author Affiliations
  • 1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022
  • 2Graduate School of the Chinese Academy of Sciences, Beijing 100039
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    Qinghua Xue, Quan Zheng, Yikun Bu, Longsheng Qian. LD-pumped passively Q-switched red laser at 660 nm[J]. Chinese Optics Letters, 2004, 2(12): 12708 Copy Citation Text show less

    Abstract

    A laser diode (LD) pumped Nd:YAG red pulse laser at 660 nm was presented by V:YAG passively Q-switching and LBO intracavity frequency doubling. With 1.6-W incident pump power, average output power of 46-mW, pulse duration (FWHM) of 23.3 ns, pulse repetition rate of 21.6 kHz, peak power of 91.4 W, and single pulse energy of 2.13 μJ were obtained. The beam quality factor M2 was less than 1.2. The fluctuations of pulse energy and repetition rate were less than 3% in 4 hours. The pulsed laser at 660 nm is expected to be used as the pump source of Cr^(3+):doped crystal to obtain the gain-switched tunable laser.
    Qinghua Xue, Quan Zheng, Yikun Bu, Longsheng Qian. LD-pumped passively Q-switched red laser at 660 nm[J]. Chinese Optics Letters, 2004, 2(12): 12708
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