• Chinese Optics Letters
  • Vol. 7, Issue 10, 882 (2009)
Y. Yao1、2, T. Ochiai1, T. Mano1, T. Kuroda1, T. Noda1, N. Koguchi3, and K. Sakoda1、2
Author Affiliations
  • 1National Institute for Materials Science, Namiki 1-1, Tsukuba 305-0044, Japan
  • 2University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
  • 3L-NESS, Universitá di Milano Bicocca, Via Cozzi 52, Milano 20125, Italy
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    DOI: 10.3788/COL20090710.0882 Cite this Article Set citation alerts
    Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, K. Sakoda. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field[J]. Chinese Optics Letters, 2009, 7(10): 882 Copy Citation Text show less

    Abstract

    A three-dimensional model of GaAs/AlGaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method. The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies. It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm.
    Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, K. Sakoda. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field[J]. Chinese Optics Letters, 2009, 7(10): 882
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