Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field

Y. Yao; T. Ochiai; T. Mano; T. Kuroda; T. Noda; N. Koguchi; K. Sakoda

doi:10.3788/COL20090710.0882

Journals >Chinese Optics Letters >Volume 7 >Issue 10 >Page 882 > Article

Chinese Optics Letters
Vol. 7, Issue 10, 882 (2009)

Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field

Y. Yao^1、2, T. Ochiai¹, T. Mano¹, T. Kuroda¹, T. Noda¹, N. Koguchi³, and K. Sakoda^1、2

Author Affiliations

¹National Institute for Materials Science, Namiki 1-1, Tsukuba 305-0044, Japan

²University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan

³L-NESS, Universitá di Milano Bicocca, Via Cozzi 52, Milano 20125, Italy

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DOI: 10.3788/COL20090710.0882 Cite this Article Set citation alerts

Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, K. Sakoda. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field[J]. Chinese Optics Letters, 2009, 7(10): 882 Copy Citation Text

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Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, K. Sakoda. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field[J]. Chinese Optics Letters, 2009, 7(10): 882

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