• Optics and Precision Engineering
  • Vol. 28, Issue 9, 1924 (2020)
CHEN Yu-xin1,2,*, LIU Yu-fei1,2, and SHANG Zheng-guo1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.37188/ope.20202809.1924 Cite this Article
    CHEN Yu-xin, LIU Yu-fei, SHANG Zheng-guo. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and Precision Engineering, 2020, 28(9): 1924 Copy Citation Text show less
    References

    [6] AKIYAMA M, KAMOHARA T, KANO K, et al.. Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering [J]. Advanced Materials, 2009, 21(5): 593-596.

    [7] DUBOIS M A, MURALT P. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering [J]. Journal of Applied Physics, 2001, 89(11): 6389.

    [8] FICHTNER S, WOLFF N, KRISHNAMURTHY G, et al.. Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems [J]. Journal of Applied Physics, 2017, 122(3): 1051-276.

    [9] KAMOHARA T, AKIYAMA M, UENO N, et al.. Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers [J]. Journal of Crystal Growth, 2005, 275(3-4): 383-388.

    [12] CHUNLONG F, XIANGLI L, BENPENG Z, et al.. AlN piezoelectric thin films for energy harvesting and acoustic devices [J]. Nano Energy, 2018: S2211285518304579.

    CHEN Yu-xin, LIU Yu-fei, SHANG Zheng-guo. Preparation of ScAlN thin film through reactive magnetron sputtering[J]. Optics and Precision Engineering, 2020, 28(9): 1924
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