A CW visible semiconductor laser at room temperature

Zheng Gwangfu; Liao Xianbing; Zheng Xianming; Hu Enshi

Journals >Chinese Journal of Lasers >Volume 9 >Issue 11 >Page 715 > Article

Chinese Journal of Lasers
Vol. 9, Issue 11, 715 (1982)

A CW visible semiconductor laser at room temperature

Zheng Gwangfu, Liao Xianbing, Zheng Xianming, and Hu Enshi

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[in Chinese]

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Zheng Gwangfu, Liao Xianbing, Zheng Xianming, Hu Enshi. A CW visible semiconductor laser at room temperature[J]. Chinese Journal of Lasers, 1982, 9(11): 715 Copy Citation Text

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Abstract

This paper reports a CW visible GaAlAs semiconductor laser at room temperature. The lasing wavelenth is about 7600 A. All the electrical and optical parameters of this visible laser are comparable to those of infrared GaAs-GaAlAs double-heterostructure lasers.

Zheng Gwangfu, Liao Xianbing, Zheng Xianming, Hu Enshi. A CW visible semiconductor laser at room temperature[J]. Chinese Journal of Lasers, 1982, 9(11): 715

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