• Journal of the Chinese Ceramic Society
  • Vol. 50, Issue 9, 2470 (2022)
HUANG Chuanjin1,*, GU Bin2, ZHOU Hai1, and FENG Wei1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.14062/j.issn.0454-5648.20220092 Cite this Article
    HUANG Chuanjin, GU Bin, ZHOU Hai, FENG Wei. Effect of Chemical Action on Material Removal Behavior During AlN Crystal Lapping[J]. Journal of the Chinese Ceramic Society, 2022, 50(9): 2470 Copy Citation Text show less
    References

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    [7] KATAHIRA K, OHMORI H, UEHARA Y, et al. ELID grinding characteristics and surface modifying effects of aluminum nitride (AlN) ceramics[J]. Inter J Mach Tools Manuf, 2005, 45(7-8): 891-896.

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    [9] SUN R, YANG X, ARIMA K, et al. High-quality plasma-assisted polishing of aluminum nitride ceramic[J]. CIRP Ann, 2020, 69(1): 301-304.

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    [11] ASGHAR K, DAS D. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar (112-2) aluminum nitride surface[J]. J Semicond, 2016, 37(3): 036001.

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    [13] HUANG C, ZHOU H, ZHU Y, et al. Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate[J]. Prec Eng, 2019, 56: 184-190.

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    [17] MOTAMEDI P, CADIEN K. XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition[J]. Appl Surf Sci, 2014, 315: 104-109.

    [18] ROSENBERGER L, BAIRD R, MCCULLEN E, et al. XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy[J]. Surf Interf Anal, 2008, 40(9): 1254-1261.

    HUANG Chuanjin, GU Bin, ZHOU Hai, FENG Wei. Effect of Chemical Action on Material Removal Behavior During AlN Crystal Lapping[J]. Journal of the Chinese Ceramic Society, 2022, 50(9): 2470
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