A simple method to measure the beam quality factor (M2) of high-power vertical-cavity surface-emitting laser (VCSEL) was designed by employing the charge coupled device (CCD) technology. When the injection currents were 900 mA, 1500 mA, 3000 mA and 6000 mA, respectively, the waists of a 980 nm bottom-emitting VCSEL with a 300 μm aperture were measured and the values of M2 were 66, 58, 44 and 53, respectively, which were calculated by Gauss fitting. In addition, far-field pattern was analyzed as the injection currents were 900 mA and 3000 mA. At the same time, far-field angles were measured and the values of them were in good agreement with the calculated value exactly.