Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 20 >Issue 3 >Page 161 > Article

Chinese Journal of Lasers
Vol. 20, Issue 3, 161 (1993)

Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser

[in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser[J]. Chinese Journal of Lasers, 1993, 20(3): 161 Copy Citation Text

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Abstract

Monolithic groove-coupled-cavity AlGaAs/GaAs lasers were fabricated by using the technique of reactive ion etched of laser facets. CW stable single mode operation room temperature were observed. Typical single mode (FWHM) is about 0.23 nm mode suppression, 19 dB, mode space, 2.5 nm, and two-cavity threshold current of mode operation, 52 mA.

Keywords

monolithic groove- coupled- cavity la optoelectro reactive ion etching

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser[J]. Chinese Journal of Lasers, 1993, 20(3): 161

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