Kefei GUO, Fei YIN, Liyu LIU, Kai QIAO, Ming LI, Tao WANG, Mengyan FANG, Chao JI, Youshan QU, Jinshou TIAN, Xing WANG. Effect of Zn Diffusion on Avalanche Breakdown Probability of InGaAs/InP Single Photon Avalanche Diodes[J]. Acta Photonica Sinica, 2023, 52(6): 0604001
- Acta Photonica Sinica
- Vol. 52, Issue 6, 0604001 (2023)
Fig. 1. Internal structure of back-illuminated InGaAs/InP SPAD
Fig. 2. Electric field simulation diagram and vertical distribution
Fig. 3. I-V characteristics and PDE
Fig. 4. Avalanche breakdown probability simulation diagram and horizontal distribution
Fig. 5. Different Tshallow avalanche breakdown probability and horizontal electric field distribution at Vex =5 V
Fig. 6. Avalanche breakdown probability of different lateral diffusion factor at Vex=5 V
Fig. 7. Avalanche breakdown probability，horizontal electric field distribution and collision ionization coefficient ratio of different deep diffusion Zn doping concentrations at Vex=5 V
Fig. 8. I-V characteristics and avalanche breakdown probability at different temperatures
Fig. 9. Variation curve of breakdown voltage and avalanche breakdown probability with temperature
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Table 1. Device structure parameters
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Table 2. Parameters of the van Overstraeten model for InP materials
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