• Chinese Journal of Lasers
  • Vol. 24, Issue 11, 973 (1997)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 1.55 μm MQW Traveling-wave Optical Amplifier[J]. Chinese Journal of Lasers, 1997, 24(11): 973 Copy Citation Text show less

    Abstract

    In this paper, preparation of the 1. 55 nm MWQ traveling- wave type semiconductor laser amplifier and the characteristics measurement are introduced. Under the condition of pulsed current injection, a gain of 20 dB and a saturation output power of 40 mW are obtained.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 1.55 μm MQW Traveling-wave Optical Amplifier[J]. Chinese Journal of Lasers, 1997, 24(11): 973
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