• Chinese Journal of Lasers
  • Vol. 23, Issue 9, 785 (1996)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Frequency Optical Noise and Electrical Noise Investigation of 1.3μm InGaAsP/InP Superluminescent Diodes[J]. Chinese Journal of Lasers, 1996, 23(9): 785 Copy Citation Text show less

    Abstract

    The experimental results of low frequency optical noise and electrical noise andtheir correlation of 1. 3 μm InGaAsP/InP superluminescent diodes fabricated by us aregiven. These results are analysed and discussed in combination with electrical derivative,optical derivative and spectrum measurement. The results demonstrate that the lowfrequency optical noise and electrical noise of superluminescent diedes are correlative, andthe noises are related to the material quality of the dieodes, structure parameters and operation conditions.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Frequency Optical Noise and Electrical Noise Investigation of 1.3μm InGaAsP/InP Superluminescent Diodes[J]. Chinese Journal of Lasers, 1996, 23(9): 785
    Download Citation