• Optoelectronics Letters
  • Vol. 10, Issue 3, 202 (2014)
Tian-wei LI, Jian-jun ZHANG*, Yu CAO, Zhen-hua HUANG, Jun MA, Jian NI, and Ying ZHAO
Author Affiliations
  • Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic,Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin 300071, China
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    DOI: 10.1007/s11801-014-4007-9 Cite this Article
    LI Tian-wei, ZHANG Jian-jun, CAO Yu, HUANG Zhen-hua, MA Jun, NI Jian, ZHAO Ying. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. Optoelectronics Letters, 2014, 10(3): 202 Copy Citation Text show less
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    CLP Journals

    [1] LI Dong-ling, FENG Xiao-fei, WEN Zhi-yu, SHANG Zheng-guo, SHE Yin. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J]. Optoelectronics Letters, 2016, 12(4): 285

    LI Tian-wei, ZHANG Jian-jun, CAO Yu, HUANG Zhen-hua, MA Jun, NI Jian, ZHAO Ying. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. Optoelectronics Letters, 2014, 10(3): 202
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