• Acta Physica Sinica
  • Vol. 69, Issue 16, 167805-1 (2020)
Meng-Qi Yang1, Yu-Hang Ji2, Qi Liang1, Chang-Hao Wang1, Yue-fei Zhang3, Ming Zhang1, Bo Wang1, and Ru-Zhi Wang1、*
Author Affiliations
  • 1College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  • 2School of Physics, Beihang University, Beijing 100191, China
  • 3Institute and Beijing Key Laboratory of Solid Microstructure and Properties, Beijing University of Technology, Beijing 100124, China
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    DOI: 10.7498/aps.69.20200445 Cite this Article
    Meng-Qi Yang, Yu-Hang Ji, Qi Liang, Chang-Hao Wang, Yue-fei Zhang, Ming Zhang, Bo Wang, Ru-Zhi Wang. Preparation, doping modulation and field emission properties of square-shaped GaN nanowires[J]. Acta Physica Sinica, 2020, 69(16): 167805-1 Copy Citation Text show less
    FESEM images Mg doped GaN nanowires prepared at different source materials ratio. (a) Sample A-a; (b) sample A-b; (c) sample A-c; (d) sample A-d; (e) sample A-e.
    Fig. 1. FESEM images Mg doped GaN nanowires prepared at different source materials ratio. (a) Sample A-a; (b) sample A-b; (c) sample A-c; (d) sample A-d; (e) sample A-e.
    FESEM images Mg doped GaN nanowires prepared at different growth times. (a) Sample B-a; (b) sample B-b; (c) sample B-c; (d) sample B-d.
    Fig. 2. FESEM images Mg doped GaN nanowires prepared at different growth times. (a) Sample B-a; (b) sample B-b; (c) sample B-c; (d) sample B-d.
    XRD spectra of sample A-e.
    Fig. 3. XRD spectra of sample A-e.
    XPS spectra of sample A-e.
    Fig. 4. XPS spectra of sample A-e.
    (a) TEM image; (b) HRTEM image and SAED pattern (inset) of sample A-e.
    Fig. 5. (a) TEM image; (b) HRTEM image and SAED pattern (inset) of sample A-e.
    Schematic diagram of nucleation and growth for square-shaped GaN nanowires.
    Fig. 6. Schematic diagram of nucleation and growth for square-shaped GaN nanowires.
    (a) PL spectra of sample A-a and sample A-e; (b) band gap analysis spectra of sample A-e.
    Fig. 7. (a) PL spectra of sample A-a and sample A-e; (b) band gap analysis spectra of sample A-e.
    (a) J-E curves; (b) F-N curves of sample A-a and sample A-e.
    Fig. 8. (a) J-E curves; (b) F-N curves of sample A-a and sample A-e.
    编号N2/sccm 气压/TorrT/℃ t/min 微波功率/WC∶Ga2O3∶MgO
    A-a13108703030012∶1∶0
    A-b13108703030012:1:0.2
    A-c13108703030012∶1∶0.5
    A-d13108703030012∶1∶1
    A-e13108703030012∶1∶1.5
    Table 1.

    The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.

    不同原料配比制备Mg掺杂GaN纳米线的实验参数

    编号N2/sccm 气压/TorrT/℃ t/min 微波功率/WC∶Ga2O3∶MgO
    B-a13108701030012∶1∶1.5
    B-b13108702030012∶1∶1.5
    B-c13108703030012∶1∶1.5
    B-d13108704030012∶1∶1.5
    Table 2.

    The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.

    不同生长时间制备Mg掺杂GaN纳米线的实验参数

    Meng-Qi Yang, Yu-Hang Ji, Qi Liang, Chang-Hao Wang, Yue-fei Zhang, Ming Zhang, Bo Wang, Ru-Zhi Wang. Preparation, doping modulation and field emission properties of square-shaped GaN nanowires[J]. Acta Physica Sinica, 2020, 69(16): 167805-1
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