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    Journals >Chinese Journal of Lasers >Volume 16 >Issue 3 >Page 153 > Article
    • Chinese Journal of Lasers
    • Vol. 16, Issue 3, 153 (1989)
    Study of picosecond properties during phaie transition in silicon
    Μa Haiming, Liu Yixian, and Li Fuming
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    Μa Haiming, Liu Yixian, Li Fuming. Study of picosecond properties during phaie transition in silicon[J]. Chinese Journal of Lasers, 1989, 16(3): 153 Copy Citation Text show less

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    Μa Haiming, Liu Yixian, Li Fuming. Study of picosecond properties during phaie transition in silicon[J]. Chinese Journal of Lasers, 1989, 16(3): 153
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