Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 24 >Issue 3 >Page 193 > Article

Chinese Journal of Lasers
Vol. 24, Issue 3, 193 (1997)

Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser[J]. Chinese Journal of Lasers, 1997, 24(3): 193 Copy Citation Text

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Abstract

The characteristic of a LD pumped highly efficient Nd:S VAP laser using a plano plano resonator is presented. The output power at 1.065 μm is 233 mW for an incident pump power of 577 mW, yielding an optical efficiency of 42.4%.

Keywords

laser Nd:Sr 5(VO 4) 3F (or Nd:S VAP)pump laser diode

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Performance of a Diode Laser End pumped Highly Efficient Nd:S VAP Laser[J]. Chinese Journal of Lasers, 1997, 24(3): 193

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