• Chinese Optics Letters
  • Vol. 20, Issue 8, 081301 (2022)
Junhu Zhou1, Jie You2、**, Hao Ouyang1, Runlin Miao1, Xiang’ai Cheng1, and Tian Jiang1、3、*
Author Affiliations
  • 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 2Defense Innovation Institute, Academy of Military Sciences PLA China, Beijing 100071, China
  • 3Beijing Institute for Advanced Study, National University of Defense Technology, Beijing 100020, China
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    DOI: 10.3788/COL202220.081301 Cite this Article Set citation alerts
    Junhu Zhou, Jie You, Hao Ouyang, Runlin Miao, Xiang’ai Cheng, Tian Jiang. Temperature insensitive multi-channel light amplification systems on SOI platform[J]. Chinese Optics Letters, 2022, 20(8): 081301 Copy Citation Text show less

    Abstract

    We present a theoretical analysis of a novel multi-channel light amplification photonic system on chip, where the nonlinear Raman amplification phenomenon in the silicon (Si) wire waveguide is considered. Particularly, a compact and temperature insensitive Mach–Zehnder interferometer filter working as demultiplexer is also exploited, allowing for the whole Si photonic system to be free from thermal interference. The propagation of the multi-channel pump and Stokes lights is described by a rigorous theoretical model that incorporates all relevant linear and nonlinear optical effects, including the intrinsic waveguide optical losses, first- and second-order frequency dispersion, self-phase and cross-phase modulation, phase shift and two-photon absorption, free-carriers dynamics, as well as the inter-pulse Raman interaction. Notably, to prevent excessive drift of the transmission window of the demultiplexer caused by ambient temperature variations and high thermo-optical coefficient of Si, an asymmetric waveguide width is adopted in the upper and lower arms of each Mach–Zehnder interferometer lattice cell. A Chebyshev half-band filter is utilized to achieve a flat pass-band transmission, achieving a temperature sensitivity of <1.4 pm/K and over 100 K temperature span. This all-Si amplifier shows a thermally robust behavior, which is desired by future Si-on-insulator (SOI) applications.
    juiz+j(1vg,i1vg,ref)uitβ2,i22uit2=ωiδnFCκinvg,iuijcκi2nvg,i(αin+αFC)ui(γi|ui|2+2miγim|um|2)ui2γimr|um|2ui,

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    Nt=Nτc+i,mDim|ui|2|um|2,

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    δnFC=e22ϵ0nω2[ΔNemce*+(ΔNh)0.8mch*],

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    αFC=e3ε0cnω2(ΔNeμemce*2+ΔNhμhmch*2).

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    γi=3ωiϵ016vg,i2ΓiWi2,

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    γim=3ωiϵ016vg,ivg,mΓimWiWm,

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    γimr=3ωiϵ016vg,ivg,mΓimrWiWm.

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    Wi=14S[ϵ(r)|e(r,ωi)|2+u0|h(r,ωi)|2]dS,

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    Γi=Sei*(r)χ^(3)(ωi,ωi,ωi)ei(r)ei*ei(r)dS,

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    Γim=Sei*(r)χ^(3)(ωm,ωm,ωi)em(r)em*ei(r)dS,

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    Γimr=Sei*(r)χ^r(ωr)em(r)em*ei(r)dS.

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    Dim={γiωiAi=m4γim(ωi+ωm)Aim.

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    FSR=λ2ngΔL,

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    dλdT=λngdneffdT,

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    FSR=λ2ng,1L1ng,2L2,

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    dλdT=λTO1L1TO2L2ng,1L1ng,2L2.

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    Junhu Zhou, Jie You, Hao Ouyang, Runlin Miao, Xiang’ai Cheng, Tian Jiang. Temperature insensitive multi-channel light amplification systems on SOI platform[J]. Chinese Optics Letters, 2022, 20(8): 081301
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