The transportation theory in the process of the electrochemical corrosion of the silicon micro channel is described by combing with the semiconductor energy band theory and charge transfer theory. Taking the n-type (100) mono-crystalline silicon wafer as the research object, the experiments are designed to find out that the optimal excitation wavelength of the carrier is 850 nm. The phosphorus ions are implanted into the ohms contact layer with the process preparation, which can produce more photon generated positive holes, the model is built in geometry to simulate the micro channel of the tip architecture for collecting the carrier. The carrier is gathered at the tip, the sidewall is passivated and the channel is grown along the tip. The effect of the different process conditions on transportation characteristics is analyzed.