The stability of the performance of indium antimonide wafers during storage and use is one of the important factors affecting the performance of the prepared detectors. In order to investigate the performance changes of indium antimonide wafers under long-time storage, high-temperature accelerated storage test was carried out on indium antimonide wafers, and several important performance parameters such as geometrical parameters, surface roughness, electrical parameters and dislocation defects were tracked and detected in the process of the test. The results show that under the conditions of high-temperature accelerated test, except for the slight change of wafer shape, other properties basically do not change, and the wafers can be stored for a long time.