• Optoelectronics Letters
  • Vol. 9, Issue 5, 375 (2013)
Xu-xu XIONG1, Li-hua JIANG1、*, Xiang-bin ZENG2, and Xiao ZHANG2
Author Affiliations
  • 1College of Science, China Three Gorges University, Yichang 443002, China
  • 2School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.1007/s11801-013-3038-y Cite this Article
    XIONG Xu-xu, JIANG Li-hua, ZENG Xiang-bin, ZHANG Xiao. Photoluminescence properties and chemical bond variations of SiNx:H films with silicon quantum dots[J]. Optoelectronics Letters, 2013, 9(5): 375 Copy Citation Text show less
    References

    [1] Peng Xue-feng, Journal of Optoelectronics·Laser 24, 39 (2013). (in Chinese)

    [2] Dal Negro L., Yi J. H., Kimerling L. C., Hamel S., Williamson A. and Galli G., Appl. Phys. Lett. 88, 183103 (2006).

    [3] Lü Wen-hui, ZHANG Jun and SHAO Le-xi, Journal of Optoelectronics·Laser 23, 2277 (2012). (in Chinese)

    [4] De la Torre J., Bremond G., Lemiti M., Guillot G., Mur P. and Buffet N., Thin Solid Films 511, 163 (2006).

    [5] Hao H. L., Wu L. K. and Shen W. Z., Appl. Phys. Lett. 92, 121922 (2008).

    [6] Molinari M., Rinnert H. and Vergnat M., J. Appl. Phys. 101, 123532 (2007).

    [7] Delachat F., Carrada M., Ferblantier G., Grob J. J. and Slaoui A., Nanotechnology 20, 415608 (2009).

    [8] Kim B. H., Cho C. H., Kim T. W., Park N. M., Sung G. Y. and Park S. J., Appl. Phys. Lett. 86, 091908 (2005).

    [9] Wang Y. Q., Wang Y. G., Cao L. and Cao Z. X., Appl. Phys. Lett. 83, 3474 (2003).

    [10] Pi X. D., Chen X. B., Ma Y. S. and Yang D. R., Nanoscale 3, 4584 (2011).

    [11] Béchir Rezgui, Abel Sibai, Tetyana Nychyporuk, Mustapha Lemiti and Georges Brémond, J. Vac. Sci. Technol. B 27, 2238 (2009).

    [12] Hao H. L., Wu L. K., Shen W. Z. and Dekkers H. F. W., Appl. Phys. Lett. 91, 201922 (2007).

    [13] Esposito E. M., Mercaldo L. V., Veneri P. D., Lancellotti L. and Privato C., Energy Procedia. 2, 159 (2010).

    [14] Mercaldo L. V., Veneri P. D., Esposito E., Massera E., Usatii I. and Privato C., Materials Science and Engineering B 159, 74 (2009).

    [15] Panchal A. K. and Solanki C. S., Journal of Crystal Growth 311, 2659 (2009).

    [16] Wang M. H., Li D. S., Yuan Z. Z., Yang D. R. and Que D. L., Appl. Phys. Lett. 90, 131903 (2007).

    [17] Ma K., Feng J. Y. and Zhang Z. J., Nanotechnology 17, 4650 (2006).

    [18] Rezgui B., Sibai A., Nychyporuk T., Lemiti M., Bremond G., Maestre D. and Palais O., Appl. Phys. Lett. 96, 183105 (2010).

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    [1] LI Dong-ling, FENG Xiao-fei, WEN Zhi-yu, SHANG Zheng-guo, SHE Yin. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J]. Optoelectronics Letters, 2016, 12(4): 285

    XIONG Xu-xu, JIANG Li-hua, ZENG Xiang-bin, ZHANG Xiao. Photoluminescence properties and chemical bond variations of SiNx:H films with silicon quantum dots[J]. Optoelectronics Letters, 2013, 9(5): 375
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