• Chinese Optics Letters
  • Vol. 14, Issue 5, 051601 (2016)
Yinbo Zheng, Lei Ding*, Xinda Zhou, Rongsheng Ba, Jing Yuan, Honglei Xu, Xiaoyu Yang, Bo Chen, Jin Na, Yajun Li, and Wanguo Zheng
Author Affiliations
  • Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
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    DOI: 10.3788/COL201614.051601 Cite this Article Set citation alerts
    Yinbo Zheng, Lei Ding, Xinda Zhou, Rongsheng Ba, Jing Yuan, Honglei Xu, Xiaoyu Yang, Bo Chen, Jin Na, Yajun Li, Wanguo Zheng. Preliminary study of the damage resistance of type I doubler KDP crystals at 532  nm[J]. Chinese Optics Letters, 2016, 14(5): 051601 Copy Citation Text show less
    Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.
    Fig. 1. Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.
    Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around 7.76 J/cm2.
    Fig. 2. Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around 7.76J/cm2.
    Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.
    Fig. 3. Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.
    Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model[8,19].
    Fig. 4. Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model[8,19].
    Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.
    Fig. 5. Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.
    Yinbo Zheng, Lei Ding, Xinda Zhou, Rongsheng Ba, Jing Yuan, Honglei Xu, Xiaoyu Yang, Bo Chen, Jin Na, Yajun Li, Wanguo Zheng. Preliminary study of the damage resistance of type I doubler KDP crystals at 532  nm[J]. Chinese Optics Letters, 2016, 14(5): 051601
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