• Chinese Journal of Lasers
  • Vol. 40, Issue 1, 118001 (2013)
Wang Hongpei*, Wang Guanglong, Qiu Peng, Gao Fengqi, and Lu Jianglei
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/cjl201340.0118001 Cite this Article Set citation alerts
    Wang Hongpei, Wang Guanglong, Qiu Peng, Gao Fengqi, Lu Jianglei. Design and Characteristics Analysis of Single Photon Detector Based on Quantum-Dot Field Effect Transistor[J]. Chinese Journal of Lasers, 2013, 40(1): 118001 Copy Citation Text show less

    Abstract

    The developing of quantum information technology calls for single photon detector to have higher capability. As a new-style single photon detector, quantum-dot based single photon detector has good potential. A single photon detector based on quantum-dot field effect transistor (QDFET) is researched. The photoconductive gain mechanism of QDFET is introduced. Then the material is chosen and the structure is designed. It′s laid stress on the experimental analysis of photoconductance quantization and noise equations. The results indicate that the single photon detection based on QDFET has great characteristic in sensitivity, photon response and photon resolution ratio.
    Wang Hongpei, Wang Guanglong, Qiu Peng, Gao Fengqi, Lu Jianglei. Design and Characteristics Analysis of Single Photon Detector Based on Quantum-Dot Field Effect Transistor[J]. Chinese Journal of Lasers, 2013, 40(1): 118001
    Download Citation