• Semiconductor Optoelectronics
  • Vol. 45, Issue 5, 693 (2024)
HUANG Tong1, MA Ruyuan1, LIU Yingxuan1, XU Tianqi1..., QIU Yang1, ZHAO Xingyan1, ZHENG Shaonan1, ZHONG Qize1, DONG Yuan1,2 and HU Ting1|Show fewer author(s)
Author Affiliations
  • 1School of Microelectronics, Shanghai University, Shanghai 201800, CHN
  • 2Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, CHN
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    DOI: 10.16818/j.issn1001-5868.2024042804 Cite this Article
    HUANG Tong, MA Ruyuan, LIU Yingxuan, XU Tianqi, QIU Yang, ZHAO Xingyan, ZHENG Shaonan, ZHONG Qize, DONG Yuan, HU Ting. Slow-wave High-speed Electro-optic Modulator Based on Barium Titanate on An Insulator at A Wavelength of 2 μm[J]. Semiconductor Optoelectronics, 2024, 45(5): 693 Copy Citation Text show less

    Abstract

    Electro-optic modulators are critical components of optical communication systems. With an increasing demand for the near-infrared spectrum in optical communication, the 2 μm mid-infrared band has emerged as a promising option for expanding the bandwidth of fiber optic communications. This study proposes a mid-infrared electro-optic modulator based on barium titanate on an insulator platform at a wavelength of 2 μm. Theoretical analyses and structural optimizations are performed on the barium titanate ridge waveguide and slow-wave electrode. The simulation results demonstrate that at a wavelength of 2 μm and a modulation length of 5 mm, the designed electro-optic modulator exhibits high modulation efficiency and achieves a large electro-optic bandwidth, with a half-wave voltage-length product (Vπ·L) of 0.677 V·cm and a 3 dB electro-optic bandwidth of 229.6 GHz.
    HUANG Tong, MA Ruyuan, LIU Yingxuan, XU Tianqi, QIU Yang, ZHAO Xingyan, ZHENG Shaonan, ZHONG Qize, DONG Yuan, HU Ting. Slow-wave High-speed Electro-optic Modulator Based on Barium Titanate on An Insulator at A Wavelength of 2 μm[J]. Semiconductor Optoelectronics, 2024, 45(5): 693
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