• Chinese Journal of Lasers
  • Vol. 44, Issue 7, 703001 (2017)
Xie Shuang1、2、*, Liang Tao1、3, Ma Xiangyang1、2, and Xu Mingsheng1、4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: 10.3788/cjl201744.0703001 Cite this Article Set citation alerts
    Xie Shuang, Liang Tao, Ma Xiangyang, Xu Mingsheng. Preparation, Properties and Optoelectronic Applications of Transition Metal Dichalcogenides[J]. Chinese Journal of Lasers, 2017, 44(7): 703001 Copy Citation Text show less

    Abstract

    Due to their atomic-level thickness and unique optoelectronic properties, the transition metal dichalcogenides (TMDs) have been received widespread attention and research. The controllable preparation, novel optoelectronic properties and optoelectronic applications in many fields, such as photodetection, light emission, spin and energy valley electronics of TMD, have been reported widely. From the three perspectives of material preparation, optoelectronic properties and applications of TMD, these works are reviewed.
    Xie Shuang, Liang Tao, Ma Xiangyang, Xu Mingsheng. Preparation, Properties and Optoelectronic Applications of Transition Metal Dichalcogenides[J]. Chinese Journal of Lasers, 2017, 44(7): 703001
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