• Frontiers of Optoelectronics
  • Vol. 6, Issue 1, 108 (2013)
Kambiz ABEDI* and Habib VAHIDI
Author Affiliations
  • Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran
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    DOI: 10.1007/s12200-012-0296-4 Cite this Article
    Kambiz ABEDI, Habib VAHIDI. Structure and microwave properties analysis of substrate removed GaAs/AlGaAs electro-optic modulator structure by finite element method[J]. Frontiers of Optoelectronics, 2013, 6(1): 108 Copy Citation Text show less
    References

    [1] Rahman BMA, Haxha S. Optimization of microwave properties for ultrahigh-speed etched and unetched lithium niobate electrooptic modulators. IEEE Journal of Lightwave Technology, 2002, 20(10): 1856-1863

    [2] Gorman T, Haxha S. Thin layer design of X-cut lithium niobate electrooptic modulator with slotted SiO2 substrate. IEEE Photonics Technology Letters, 2008, 20(2): 111-113

    [3] Gorman T, Haxha S. Design optimization of Z-cut lithium niobate electrooptic modulator with profiled metal electrodes and waveguides. IEEE Journal of Lightwave Technology, 2007, 25(12): 3722-3729

    [4] Obayya S S A, Haxha S, Rahman B M A, Grattan K T. Numerical modeling of polarization conversion in semiconductor electro-optic modulators. Applied Optics, 2005, 44(6): 1032-1038

    [5] Haxha S, Rahman B M A, Obayya S S A, Grattan K T. Velocity matching of a GaAs electro-optic modulator. Applied Optics, 2003, 42(36): 7179-7187

    [6] Cui Y S, Berini P. Modeling and design of GaAs traveling-wave electrooptic modulators based on the planar microstrip structure. IEEE Journal of Lightwave Technology, 2006, 24(6): 2368-2379

    [7] Gorman T, Haxha S, Ju J J. Ultra-high-speed deeply etched electrooptic polymer modulator with profiled cross section. IEEE Journal of Lightwave Technology, 2009, 27(1): 68-76

    [8] Shin J, Ozturk C, Sakamoto S R, Chiu Y J, Dagli N. Novel T-rail electrodes for substrate removed low-voltage high-speed GaAs/AlGaAs electrooptic modulators. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(2): 636-643

    [9] Shin J, Wu S, Dagli N. 35-GHz bandwidth, 5-V-cm drive voltage bulk GaAs substrate removed electrooptic modulators. IEEE Photonics Technology Letters, 2007, 19(18): 1362-1364

    [10] Shin J, Wu S, Dagli N. Bulk undoped GaAs-AlGaAs substrateremoved electrooptic modulators with 3.7 V-cm drive voltage at 1.55 μm. IEEE Photonics Technology Letters, 2006, 18(21): 2251-2253

    [11] Koshiba M, Tsuji Y, Nishio M. Finite-element modeling of broadband traveling-wave optical modulators. IEEE Transactions on Microwave Theory and Techniques, 1999, 47(9): 1627-1633

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    Kambiz ABEDI, Habib VAHIDI. Structure and microwave properties analysis of substrate removed GaAs/AlGaAs electro-optic modulator structure by finite element method[J]. Frontiers of Optoelectronics, 2013, 6(1): 108
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