• Chinese Journal of Lasers
  • Vol. 38, Issue 5, 502003 (2011)
Zhu Shaolan1、2、*, Zhao Wei1, Liu Baiyu1, Shi Wei3, and Yang Yanlong1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/cjl201138.0502003 Cite this Article Set citation alerts
    Zhu Shaolan, Zhao Wei, Liu Baiyu, Shi Wei, Yang Yanlong. Cavity Dumped Laser Using Fast GaAs Photoconductive Switch[J]. Chinese Journal of Lasers, 2011, 38(5): 502003 Copy Citation Text show less

    Abstract

    Cavity dumping is an effective technique for generating Q-switched laser pulses of relatively large energy and extremely short time duration, and the width of Q-switched pulses is primarily a function of the oscillator cavity length. The solid state lateral semi-insulating GaAs photoconductive semiconductor switch (PCSS) has the unique ability to handle high power at very fast response time with very little timing jitter. A novel and effective technique of cavity dumping laser for generating short Q-switched laser pulses with a GaAs PCSS is presented. In a flashlamp pumped Nd:YAG laser with 20 cm long stable resonator, 1.7 ns short laser pulses have been obtained, and the pulse to pulse duration instability is less than 7% and energy instability is less than 3%.
    Zhu Shaolan, Zhao Wei, Liu Baiyu, Shi Wei, Yang Yanlong. Cavity Dumped Laser Using Fast GaAs Photoconductive Switch[J]. Chinese Journal of Lasers, 2011, 38(5): 502003
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