The effect of CdZnTe substrates with different polarity (111) plane on slider liquid phase epitaxalgrowth of Hg_1-xCd_xTe was studied. The experimental results show that the composition and thickness of HgCdTe films grown by slider liquid phase epitaxy on (111)A surface CdZnTe substrate were equivalent to those on conventional (111)B surface CdZnTe substrate; the contact angles between HgCdTe melt and (111) A surface and (111) B surface of HgCdTe films grown on CdZnTe substrate were respectively 50±2° and 30±2°, and it is confirmed that the surface tension between HgCdTe melt and (111) A surface of HgCdTe film is larger combined with micro model analysis; the difference between the surface morphology of HgCdTe film grown on (111) A surface and that on (111) B surface was observed and discussed; the FWHM of the HgCdTe film grown on (111) A surface was 33.1 arcsec. The effect of (111) plane polarity on melt droplet is reported for the first time, and the results show that slider liquid phase epitaxy of Hg_1-xCd_xTe on (111) A surface CdZnTe substrate can greatly reduce melt droplet of the film without reducing the crystal quality.