• Chinese Journal of Lasers
  • Vol. 21, Issue 8, 661 (1994)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Performances and Mechanism of Frequency Domain Optical storage for a Highly-efficient Orgsnic Photon-gated Hole Burning Material[J]. Chinese Journal of Lasers, 1994, 21(8): 661 Copy Citation Text show less

    Abstract

    Performances and mechanism of frequency domain optical storage were studied on a highly-efficient organic photon-gated spectral hole burning material Zn-tetrabenzoporphyrin/crotonic acid/phenoxy resin (ZnTBP/CA/PhR) film. Extremely deep holes were burnt on the broat Q(0,0) band. Data writing, reading,erasing and longterm storage at 4.2 K were demonstrated. Photo-product was detected and laser induced donor-acceptor electron transfer was evidenced responsible for the hole formation.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Performances and Mechanism of Frequency Domain Optical storage for a Highly-efficient Orgsnic Photon-gated Hole Burning Material[J]. Chinese Journal of Lasers, 1994, 21(8): 661
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