• Acta Photonica Sinica
  • Vol. 43, Issue 6, 625001 (2014)
HU Wei, DOU Xianan, and SUN Xiaoquan
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/gzxb20144306.0625001 Cite this Article
    HU Wei, DOU Xianan, SUN Xiaoquan. The Analysis of the Photocarriers of the InGaAs pin Phtodiode Response to the High Optical Injection[J]. Acta Photonica Sinica, 2014, 43(6): 625001 Copy Citation Text show less
    References

    [1] ZHANG W, LI T, LOURS M, et al. Amplitude to phase conversion of InGaAs pin photodiodes for femtosecond lasers microwave signal generation [J]. Applied physics B. 2012, 106(2): 301-308.

    [2] TAYLOR J, DATTA S, HATI A, et al. Characterization of powertophase conversion in highspeed pinphotodiodes [J]. IEEE Photonics Journal. 2011, 3(1): 140-151.

    [3] ZHANG Lingzi, ZUO Yuhua, CAO Quan, et al. Highspeed and highpower unitravelingcarrier photodetector [J]. Acta Physica Sinica. 2012, 61(13): 138501.

    [4] ZHU Bin, HAN Qin, YANG XiaoHong. Highpower property of resonantcavityenhanced photodetectors grown on GaAs [J]. Acta Photonica Sinica, 2009, 38(5): 1074-1079.

    [5] LARID J S, ONODA S, HIRAO T, et al. Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector [J]. Journal of Applied Physics, 2008, 104(8): 01-10.

    [6] JOUDAWLKIS P W, DONNELL F J, HARGREAVES J J, et al. Absorption saturation nonlinearity in InGaAs/InP pin photodiodes [C]. in the 15th Annual Meeting of the IEEE Laser and ElectroOptics Society Glasgow, (Scotland, UK, 2002): 426-427.

    [7] DUAN N, WANG X, NING L, et al. Thermal analysis of highpower InGaAsInP photodiodes [J]. IEEE Journal of Quantum Electronics, 2006, 42(11): 1255-1258.

    [8] DENTAN M, DECREMOUX B. Numerical simulation of the nonlinear response of a pin photodiode under high illumination [J]. IEEE Journal of Lightwave Technology, 1990, 8(8): 1137-1144.

    [9] KUHL D, HIERONYMI, BOTTCHER E H, et al. Influence of space charge on the impulse response of InGaAs metalsemiconductormetal photodetectors [J]. Journal of Lightwave Technology, 1992, 10(6): 753-759.

    [10] ROULSTON D J, ARORA N D, CHAMBERLAIN S G. Modeling and measurement of minoritycarrier lifetime versus doping in diffused layers of n+p silicon diodes [J]. IEEE Transaction on Electron Devices, 1982, 29(2): 284-291.

    [11] LAIRD J S, HIRAO T, ONODA S, et al. Highinjection carrier dynamics generated by MeV heavy ions impacting highspeed photodetectors [J]. Journal of Applied Physics, 2005, 98(1): 013530.

    [12] WILLIAMS K J, ESMAN R D, DAGENAIS M. Nonlinearities in pin microwave photodetectors [J]. IEEE Photonics Technology, 1996, 14(1): 84-96.

    HU Wei, DOU Xianan, SUN Xiaoquan. The Analysis of the Photocarriers of the InGaAs pin Phtodiode Response to the High Optical Injection[J]. Acta Photonica Sinica, 2014, 43(6): 625001
    Download Citation