[1] ZHANG W, LI T, LOURS M, et al. Amplitude to phase conversion of InGaAs pin photodiodes for femtosecond lasers microwave signal generation [J]. Applied physics B. 2012, 106(2): 301-308.
[2] TAYLOR J, DATTA S, HATI A, et al. Characterization of powertophase conversion in highspeed pinphotodiodes [J]. IEEE Photonics Journal. 2011, 3(1): 140-151.
[3] ZHANG Lingzi, ZUO Yuhua, CAO Quan, et al. Highspeed and highpower unitravelingcarrier photodetector [J]. Acta Physica Sinica. 2012, 61(13): 138501.
[4] ZHU Bin, HAN Qin, YANG XiaoHong. Highpower property of resonantcavityenhanced photodetectors grown on GaAs [J]. Acta Photonica Sinica, 2009, 38(5): 1074-1079.
[5] LARID J S, ONODA S, HIRAO T, et al. Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector [J]. Journal of Applied Physics, 2008, 104(8): 01-10.
[6] JOUDAWLKIS P W, DONNELL F J, HARGREAVES J J, et al. Absorption saturation nonlinearity in InGaAs/InP pin photodiodes [C]. in the 15th Annual Meeting of the IEEE Laser and ElectroOptics Society Glasgow, (Scotland, UK, 2002): 426-427.
[7] DUAN N, WANG X, NING L, et al. Thermal analysis of highpower InGaAsInP photodiodes [J]. IEEE Journal of Quantum Electronics, 2006, 42(11): 1255-1258.
[8] DENTAN M, DECREMOUX B. Numerical simulation of the nonlinear response of a pin photodiode under high illumination [J]. IEEE Journal of Lightwave Technology, 1990, 8(8): 1137-1144.
[9] KUHL D, HIERONYMI, BOTTCHER E H, et al. Influence of space charge on the impulse response of InGaAs metalsemiconductormetal photodetectors [J]. Journal of Lightwave Technology, 1992, 10(6): 753-759.
[10] ROULSTON D J, ARORA N D, CHAMBERLAIN S G. Modeling and measurement of minoritycarrier lifetime versus doping in diffused layers of n+p silicon diodes [J]. IEEE Transaction on Electron Devices, 1982, 29(2): 284-291.
[11] LAIRD J S, HIRAO T, ONODA S, et al. Highinjection carrier dynamics generated by MeV heavy ions impacting highspeed photodetectors [J]. Journal of Applied Physics, 2005, 98(1): 013530.
[12] WILLIAMS K J, ESMAN R D, DAGENAIS M. Nonlinearities in pin microwave photodetectors [J]. IEEE Photonics Technology, 1996, 14(1): 84-96.