[1] Klingenstein W, Schweizer H. Direct gap recombination in germanium at high excitation level and low temperature. Solid-State Electronics, 1978, 21(11-12): 1371-1374
[2] Sun X C, Liu J F, Kimerling L C, Michel J. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Optics Letters, 2009, 34(8): 1198-1200
[3] Cheng S L, Lu J, Shambat G, Yu H Y, Saraswat K, Vuckovic J, Nishi Y. Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate. Optics Express, 2009, 17(12): 10019-10024
[4] Liu J F, Sun X C, Kimerling L C, Michel J. Direct-gap optical gain of Ge on Si at room temperature. Optics Letters, 2010, 34(11): 1738-1740
[5] Liu J F, Sun X C, Camacho-Aguilera R, Kimerling L C, Michel J. Ge-on-Si laser operating at room temperature. Optics Letters, 2010, 35(5): 679-681
[6] Jalali B, Fathpour S. Silicon photonics. Journal of Lightwave Technology, 2006, 24(12): 4600-4615
[7] Soref R. Silicon photonics: a review of recent literature. Silicon, 2010, 2(1): 1-6
[8] Oehme M, Werner J, Kaschel M, Kirfel O, Kasper E. Germanium waveguide photodetectors integrated on silicon with MBE. Thin Solid Films, 2008, 517(1): 137-139
[9] Klinger S, Berroth M, Kaschel M, Oehme M, Kasper E. Ge-on-Si pi-n photodiodes with a 3-dB bandwidth of 49 GHz. IEEE Photonics Technology Letters, 2009, 21(13): 920-922
[10] Oehme M, Kaschel M, Werner J, Kirfel O, Kasper E, Schulze J. Germanium on silicon photodetectors with broad spectral range. Journal of the Electrochemical Society, 2010, 157(2): H144
[11] Schmid M, Oehme M, Kaschel M, Werner J, Kasper E, Schulze J. Franz-Keldysh effect in germanium p-i-n photodetectors on silicon. In: 7th IEEE International Conference on Group IV Photonics (GFP). 2010, 329-331
[12] Oehme M, Werner J, Kasper E. Molecular beam epitaxy of highly antimony doped germanium on silicon. Journal of Crystal Growth, 2008, 310(21): 4531-4534
[13] Kasper E, Oehme M, Lupaca-Schomber J. High Ge content SiGe alloys: doping and contact formation. ECS Transactions, 2008, 16(10): 893-904
[14] Kittler M, Aguirov T. ECS 2010, post-deadline talk 15. Klaassen D B M, Slotboom J W, de Graaff H C. Unified apparent bandgap narrowing in n- and p-type silicon. Solid-State Electronics, 1992, 35(2): 125-129
[15] Pankove J I, Aigrain P. Optical absorption of arsenic-doped degenerate germanium. Physical Review, 1962, 126(3): 956-962
[16] Jain S C, Roulston D J. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1 - x strained layers. Solid-State Electronics, 1991, 34(5): 453-465
[17] Burstein E. Anomalous optical absorption limit in InSb. Physical Review, 1954, 93(3): 632-633
[18] Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J. Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes. In: 7th IEEE International Conference on Group IV Photonics Late paper, 2010
[19] Kasper E, Paul D J. Silicon Integrated Quantum Circuits. Berlin: Springer Verlag, 2005