• Frontiers of Optoelectronics
  • Vol. 5, Issue 3, 256 (2012)
E. KASPER1、*, M. OEHME1, J. WERNER1, T. AGUIROV2, and M. KITTLER2
Author Affiliations
  • 1Institut für Halbleitertechnik (IHT), University of Stuttgart, Stuttgart 70569, Germany
  • 2Joint Lab IHP/BTU Cottbus, Cottbus 03013, Germany
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    DOI: 10.1007/s12200-012-0235-4 Cite this Article
    E. KASPER, M. OEHME, J. WERNER, T. AGUIROV, M. KITTLER. Direct band gap luminescence from Ge on Si pin diodes[J]. Frontiers of Optoelectronics, 2012, 5(3): 256 Copy Citation Text show less
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    [2] Sun X C, Liu J F, Kimerling L C, Michel J. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Optics Letters, 2009, 34(8): 1198-1200

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    [8] Oehme M, Werner J, Kaschel M, Kirfel O, Kasper E. Germanium waveguide photodetectors integrated on silicon with MBE. Thin Solid Films, 2008, 517(1): 137-139

    [9] Klinger S, Berroth M, Kaschel M, Oehme M, Kasper E. Ge-on-Si pi-n photodiodes with a 3-dB bandwidth of 49 GHz. IEEE Photonics Technology Letters, 2009, 21(13): 920-922

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    [11] Schmid M, Oehme M, Kaschel M, Werner J, Kasper E, Schulze J. Franz-Keldysh effect in germanium p-i-n photodetectors on silicon. In: 7th IEEE International Conference on Group IV Photonics (GFP). 2010, 329-331

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    [18] Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J. Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes. In: 7th IEEE International Conference on Group IV Photonics Late paper, 2010

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    E. KASPER, M. OEHME, J. WERNER, T. AGUIROV, M. KITTLER. Direct band gap luminescence from Ge on Si pin diodes[J]. Frontiers of Optoelectronics, 2012, 5(3): 256
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