• Acta Photonica Sinica
  • Vol. 50, Issue 3, 194 (2021)
Yueke DING and Shihua HUANG
Author Affiliations
  • Department of physics, Zhejiang Normal University, zhejiangJinhua321004,China
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    DOI: 10.3788/gzxb20215003.0331001 Cite this Article
    Yueke DING, Shihua HUANG. Study on Passivation of Monocrystalline Silicon by Tandem Hydrogenated Amorphous Silicon Film[J]. Acta Photonica Sinica, 2021, 50(3): 194 Copy Citation Text show less
    The influence of different hydrogen dilution ratio on passivation effect of amorphous silicon film
    Fig. 1. The influence of different hydrogen dilution ratio on passivation effect of amorphous silicon film
    Raman spectra of i-a-Si:H deposited by different hydrogen dilution ratio
    Fig. 2. Raman spectra of i-a-Si:H deposited by different hydrogen dilution ratio
    The influence of different annealing temperatures on carrier lifetime variation in the structure of i-a-Si:H/n-c-Si/i-a-Si:H
    Fig. 3. The influence of different annealing temperatures on carrier lifetime variation in the structure of i-a-Si:H/n-c-Si/i-a-Si:H
    Raman spectra of i-a-Si:H film in different annealing temperature
    Fig. 4. Raman spectra of i-a-Si:H film in different annealing temperature
    Raman spectra of both monolayer and interlayer of amorphous silicon film
    Fig. 5. Raman spectra of both monolayer and interlayer of amorphous silicon film
    The influence of monolayer and interlayer i-a-Si:H films on passivation effect of silicon wafer before and after annealing with different hydrogen dilution ratios
    Fig. 6. The influence of monolayer and interlayer i-a-Si:H films on passivation effect of silicon wafer before and after annealing with different hydrogen dilution ratios
    Yueke DING, Shihua HUANG. Study on Passivation of Monocrystalline Silicon by Tandem Hydrogenated Amorphous Silicon Film[J]. Acta Photonica Sinica, 2021, 50(3): 194
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