• Journal of Applied Optics
  • Vol. 43, Issue 6, 1181 (2022)
Tongtong LI1,2,*, Chao XIAO1,2, Gangcheng JIAO1,2, Lei YAN1,2..., Haibo FAN1,2, Jing MA1,2 and Chenglin LI1,2|Show fewer author(s)
Author Affiliations
  • 1Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China
  • 2Kunming Institute of Physics, Kunming 650223, China
  • show less
    DOI: 10.5768/JAO202243.0604019 Cite this Article
    Tongtong LI, Chao XIAO, Gangcheng JIAO, Lei YAN, Haibo FAN, Jing MA, Chenglin LI. Degassing method of electronic sensitive CMOS components[J]. Journal of Applied Optics, 2022, 43(6): 1181 Copy Citation Text show less

    Abstract

    Electron bombarded active pixel sensor (EBAPS) is a hybrid vacuum-solid low-level-light device. Its performance and service life depend on the vacuum maintenance of the device to a certain extent. The reasons for the decline of vacuum degree of EBAPS devices were analyzed, the serious consequences of the deterioration of vacuum degree were deduced, and the means to improve and maintain the internal vacuum degree of EBAPS devices were put forward. By constructing an ultra-high vacuum degassing system, the degassing characteristics of the core components of EBAPS electronic sensitive complementary metal-oxide-semiconductor (CMOS) components were studied. According to the research results, the optimal degassing process parameters were obtained, which provided a technical basis for the preparation of EBAPS digital low-level-light devices.
    Tongtong LI, Chao XIAO, Gangcheng JIAO, Lei YAN, Haibo FAN, Jing MA, Chenglin LI. Degassing method of electronic sensitive CMOS components[J]. Journal of Applied Optics, 2022, 43(6): 1181
    Download Citation