The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it’s easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.