[1] Van den Hoven G N,Koper R J I M,Polman A.Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon.Appl Phys Lett,1996,68(14):1886～1888

[3] Richard D L,Syms R A,Huang Weibin.Layout optimization for Erbium-doped waveguide amplifiers.Lightwave Techno,2002,20(3):454～462

[4] Van den Hoven G N,Snoeks E,Polman A.Photoluminescence characterization of Er-implanted Al2O3 films.Appl Phys Lett,1993,62(24):3065～3067

[5] Sema R,De Castro M J,Chaos J A,et al.The role of Er3+-Er3+separation on the luminescence of Er3+-doped Al2O3 films prepared by pulsed laser deposition.Appl Phys Lett,1999,74(26):4073～4075

[6] Xiang Q,Zhou Y,et al.Optical properties of Er3+-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol-gel processes.Thin Solid Films,2000,370:243～247

[10] Pasquale F D, Zoboli M.Analysis of Erbium-doped waveguide amplifiers by a full-vectorial finite-element method.J of Lightwave Techno,1993,11(10):1565～1573

[11] Van den hoven G H, Snoake E, Polman A,et al.Upconversion in Er-implanted Al2O3 waveguides.J Appl Phys,1996,79(3): 1258～1265

[12] Pasquale F D, Federighu M. Modeling of uniform and pair-induced upconversion mechanisms in high- concentration erbium-doped silica waveguides.J of Lightwave Techno,1995,13(9): 1859～1863