[2] JIAO Q Q. Improved electrical characteristics of 1200V/ 20A 4H-SiC diode by substrate thinning and laser anneal-ing[J]. Journal of Physics: Conference Series，2021，2083（2）: 1-10.

[3] ZHOU Z W，ZHANG Z Z，HE W W，et al. The Ohmic contact of 4H-SiC power devices by pulse laser anneal-ing and rapid thermal annealing[J]. MSF，2020，1004:712-717.

[4] ZHOU Z，HE W，ZHANG Z，et al. Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using differ-ent annealing methods[J]. Nano Technology and Preci-sion Engineering，2021，4（1）: 20-25.

[5] RASCUNA P，BADALA C，TRINGALI C，et al. Sag-gio，morphological and electrical properties of nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC[J]. Materials Science in Semiconduc-tor Processing，2019，97: 62-66.

[6] CHENG Y. Fabrication of Ohmic contact on semi-insu-lating 4H-SiC substrate by laser thermal annealing[J]. Journal of Applied Physics，2016，119（10）: 201-206.

[7] MILANTHA D S，TERUHISA K，TAKAMICHI M，et al. Formation of epitaxial Ti-Si-C ohmic contact on 4H-SiC C face using pulsed-laser annealing[J]. Appl Phys，2017，110: 252108.

[8] BERGER C，ALQUIER D，MICHAUD J F. Optimisa-tion of Ti ohmic contacts formed by laser annealing on 4H-SiC[J]. MSF，2022，1062: 219-223.

[10] BERGER C. Electrical，morphological and structural properties of Ti ohmic contacts formed on n-type 4H-SiC by laser thermal annealing[J]. Materials Science in Semi-conductor Processing，2022，151: 62-66.

[11] SILVA M D，KAWASAKI T，KIKKAWA T，et al. Low resistance Ti-Si-C ohmic contacts for 4H-SiC power de-vices using laser annealing[J]. Materials Science Forum， 2017，4395 : 399-402.