Study on Picosecond Laser Dicing Process of Sapphire Substrates

Yi-nan ZHANG; De-feng Mo; Si-min HONG; Xue LI

doi:10.3969/j.issn.1672-8785.2020.12.003

Journals >INFRARED >Volume 41 >Issue 12 >Page 18 > Article

INFRARED
Vol. 41, Issue 12, 18 (2020)

Study on Picosecond Laser Dicing Process of Sapphire Substrates

Yi-nan ZHANG^1、2、*, De-feng Mo^1、2, Si-min HONG^1、2, and Xue LI^1、2

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2020.12.003 Cite this Article

ZHANG Yi-nan, Mo De-feng, HONG Si-min, LI Xue. Study on Picosecond Laser Dicing Process of Sapphire Substrates[J]. INFRARED, 2020, 41(12): 18 Copy Citation Text

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References

[1] Lawrence J. Advances in Laser Materials Processing [M]. Duxford: Woodhead Publishing, 2018.

[4] Mingareev I, Fornaroli C, Gillner A. Laser Dicing of Silicon and Electronics Substrates [M]//Lawrence J.Advances in Laser Materials Processing.Duxford:Woodhead Publishing, 2018.

CLP Journals

[1] XIA Shao-jie, CHEN Jun. Research on Current and Capacitance Characteristics of p-i-n InP/InGaAs Photodetector[J]. INFRARED, 2021, 42(1): 1

ZHANG Yi-nan, Mo De-feng, HONG Si-min, LI Xue. Study on Picosecond Laser Dicing Process of Sapphire Substrates[J]. INFRARED, 2020, 41(12): 18

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