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    Journals >Chinese Journal of Lasers >Volume 24 >Issue 7 >Page 595 > Article
    • Chinese Journal of Lasers
    • Vol. 24, Issue 7, 595 (1997)
    Conditions for Bistability in Two segment Semiconductor Lasers
    [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Conditions for Bistability in Two segment Semiconductor Lasers[J]. Chinese Journal of Lasers, 1997, 24(7): 595 Copy Citation Text show less

    Abstract

    Based on modified rate equations, conditions for bistability in two segment semiconductor lasers have been deduced. Effects of Auger coefficient and bias current of the absorber segment on bistability are discussed.

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    [in Chinese], [in Chinese], [in Chinese]. Conditions for Bistability in Two segment Semiconductor Lasers[J]. Chinese Journal of Lasers, 1997, 24(7): 595
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