LPE of InGaAsP/GaAs Semiconductor Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 25 >Issue 1 >Page 21 > Article

Chinese Journal of Lasers
Vol. 25, Issue 1, 21 (1998)

LPE of InGaAsP/GaAs Semiconductor Lasers

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LPE of InGaAsP/GaAs Semiconductor Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 21 Copy Citation Text

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Abstract

A modified liquid phase epitaxy method was used to grow InGaAsP materials on the GaAs substrate. The FWHM of photoluminescence at 10 K was 14 meV, wafers of SCH multilayer epitaxial structures were obtained with a threshold current density of 300 A/cm 2, and the hgihest CW output power obtained from wide stripe lasers was 2.1 W.

Keywords

SCH threshold current density LPE

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LPE of InGaAsP/GaAs Semiconductor Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 21

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