• Acta Photonica Sinica
  • Vol. 32, Issue 2, 249 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Heavy Carbon Doping of GaAs by Metalorganic Chemical Vapor Deposition[J]. Acta Photonica Sinica, 2003, 32(2): 249 Copy Citation Text show less
    References

    [1] Kuech T F, Tischler M A, Wang P J,et al.Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy. Appl Phys Lett,1988, 53(14):1317~1319

    [2] Watanabe N, Hiroshi I. Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition. Journal of Crystal Growth,1997,178:213~219

    [3] Kushibe M, Eguchi K, Funamizu M, et al. Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using low Ⅴ/Ⅲ ratio. Appl Phys Lett, 1990, 56(13): 1248~1250

    [4] De Lyon T J, Woodall J M, Goorsky M S, et al. Lattice contraction due to carbon doping of GaAs grow by metalorganic molecular beam epitaxy. Appl Phys Lett, 1990,56(11):1040~1042

    [5] Takamoto T, Yumaguchi M. Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells. Journal of Applied Physics, 1999,1482~1486

    [6] Gotoh S, Ueda T, Kakinuma H, et al. Thermal stability of GaAs tunnel junctions using caubon as a p-type dopant grown by metal-organic vapor phase epitaxy. Solar Energy Material and Solar Cells, 1998, 50: 281~288

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Heavy Carbon Doping of GaAs by Metalorganic Chemical Vapor Deposition[J]. Acta Photonica Sinica, 2003, 32(2): 249
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