• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Shan Gao, Chong-Yang Zhang, Hong-Rui Ao, and Hong-Yuan Jiang
Author Affiliations
  • School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
  • show less
    DOI: 10.1088/1674-1056/ab8da1 Cite this Article
    Shan Gao, Chong-Yang Zhang, Hong-Rui Ao, Hong-Yuan Jiang. Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less
    Schematic diagram of piezoelectric energy harvesting vibrator.
    Fig. 1. Schematic diagram of piezoelectric energy harvesting vibrator.
    Schematic diagram of SECE circuit.
    Fig. 2. Schematic diagram of SECE circuit.
    Schematic diagram of thyristor switch.
    Fig. 3. Schematic diagram of thyristor switch.
    Schematic diagram of ISECE circuit.
    Fig. 4. Schematic diagram of ISECE circuit.
    Schematic diagram of spring–damping–mass vibration model.
    Fig. 5. Schematic diagram of spring–damping–mass vibration model.
    Surface topography of sputtered ZnO film under magnification factor of 8000.
    Fig. 6. Surface topography of sputtered ZnO film under magnification factor of 8000.
    XRD spectrum of sputtered ZnO film.
    Fig. 7. XRD spectrum of sputtered ZnO film.
    Schematic diagram of experimental setup.
    Fig. 8. Schematic diagram of experimental setup.
    Experimental apparatus of whole energy harvester testing system.
    Fig. 9. Experimental apparatus of whole energy harvester testing system.
    Plots of theoretical voltage output Uversus frequency f for four different thickness values of ZnO film.
    Fig. 10. Plots of theoretical voltage output Uversus frequency f for four different thickness values of ZnO film.
    Plots of theoretical voltage output Uversus frequency f of ZnO film under four different external forces.
    Fig. 11. Plots of theoretical voltage output Uversus frequency f of ZnO film under four different external forces.
    Plots of theoretical output power Pversus resistance in SECE and ISECE circuits.
    Fig. 12. Plots of theoretical output power Pversus resistance in SECE and ISECE circuits.
    Plots of experimental voltage output Uversus frequency f under three different forces.
    Fig. 13. Plots of experimental voltage output Uversus frequency f under three different forces.
    Experimental output power Pversus resistance R in SECE and ISECE circuits.
    Fig. 14. Experimental output power Pversus resistance R in SECE and ISECE circuits.
    Length/mmWidth/mmThickness/mm
    Steel beam80122
    Si substrate10100.625
    ZnO film880.30
    Table 1. Dimensions of piezoelectric components in vibrator.
    Circuit componentValue
    Cz0.4 μF
    C15 μF
    C21 μF
    L12 H
    L20.8 H
    Table 2. Specifications of components in ISECE circuit.
    Deposition parametersValues
    TargetZnO (99.99%)
    Substratesilica slice (110)
    Target-substrate distance50 mm
    Deposition time6.5 h
    Pressure Ar:O21.0 Pa 4 : 1
    Substrate temperature200 °C
    Sputtering power110 W
    Table 3. Deposition parameters of ZnO film.
    ParameterValue
    Overall roughness/nm1.46
    Local maximum roughness/nm1.96
    Relatively intensity48
    Grain diameter/nm17.4
    Diffraction angle 2θ/(°)34.44
    Standard deviation0.01
    Full width at half maximum/(°)0.45
    Table 4. Surface topography testing values of ZnO film.
    Shan Gao, Chong-Yang Zhang, Hong-Rui Ao, Hong-Yuan Jiang. Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit[J]. Chinese Physics B, 2020, 29(8):
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