• Acta Photonica Sinica
  • Vol. 53, Issue 10, 1014002 (2024)
Yi LI1,2, Wenlong WEN1,*, Qianhao WANG1, Qianglong LI1..., Hualong ZHAO1 and Feng LI1|Show fewer author(s)
Author Affiliations
  • 1Photonic Manufacturing System and Application Research Center, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China
  • 2School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/gzxb20245310.1014002 Cite this Article
    Yi LI, Wenlong WEN, Qianhao WANG, Qianglong LI, Hualong ZHAO, Feng LI. Sub-nanosecond Rising-edge Narrow Pulse Driver Circuit and Analog Simulation[J]. Acta Photonica Sinica, 2024, 53(10): 1014002 Copy Citation Text show less
    Circuit systems design
    Fig. 1. Circuit systems design
    Gate delay method to generate pulses
    Fig. 2. Gate delay method to generate pulses
    Main charging and discharging circuit design
    Fig. 3. Main charging and discharging circuit design
    Driver circuit for laser diodes
    Fig. 4. Driver circuit for laser diodes
    Temperature and compensation network circuits
    Fig. 5. Temperature and compensation network circuits
    Temperature control circuit schematic
    Fig. 6. Temperature control circuit schematic
    Temperature control circuit schematic
    Fig. 7. Temperature control circuit schematic
    Peripheral circuit pulse simulation diagram
    Fig. 8. Peripheral circuit pulse simulation diagram
    FPGA output pulse width
    Fig. 9. FPGA output pulse width
    Minimum pulse width
    Fig. 10. Minimum pulse width
    The output repetition frequency of FPGA
    Fig. 11. The output repetition frequency of FPGA
    Simulation of Si-based MOSFET and drivers
    Fig. 12. Simulation of Si-based MOSFET and drivers
    Simulation of GaN FET integrated circuits
    Fig. 13. Simulation of GaN FET integrated circuits
    Simulated waveforms for capacitance changes
    Fig. 14. Simulated waveforms for capacitance changes
    Simulated waveform of resistance change
    Fig. 15. Simulated waveform of resistance change
    Simulated waveforms for inductance changes
    Fig. 16. Simulated waveforms for inductance changes
    Simulation of Si-based MOSFET with driver joining transmission characteristics
    Fig. 17. Simulation of Si-based MOSFET with driver joining transmission characteristics
    Transmission characteristics of conductors
    Fig. 18. Transmission characteristics of conductors
    Introduction of inductive analog leads in the discharge circuit
    Fig. 19. Introduction of inductive analog leads in the discharge circuit
    Semiconductor laser parallel capacitance
    Fig. 20. Semiconductor laser parallel capacitance
    The output pulse of MOSFET drain
    Fig. 21. The output pulse of MOSFET drain
    Semiconductor laser side pulse output
    Fig. 22. Semiconductor laser side pulse output
    The output laser pulse of semiconductor laser
    Fig. 23. The output laser pulse of semiconductor laser
    Spectrogram of seed signals
    Fig. 24. Spectrogram of seed signals
    Power stability test chart
    Fig. 25. Power stability test chart
    ParameterTypical
    Peak laser drive current capability15 A
    Maximum gate source voltage5 V
    Input pulldown resistance1.25 kΩ
    Turn on delay time3.5 ns
    Drain rise time0.32 ns
    Turn off delay time3.2 ns
    Drain fall time0.75 ns
    Input capacitance63 pF
    Output capacitance73 pF
    Table 1. Electrical characterization of GaN FET integrated circuits
    ParameterTypical
    TEC operating current2.2 A
    TEC operating voltage3.3 V
    Table 2. TEC parameters
    Temperature/℃Testing thermal resistance/kΩManual thermal resistance/kΩ
    525.3725.40
    1019.8719.90
    1515.8215.71
    2012.5212.49
    259.9810.00
    308.038.06
    356.216.27
    Table 3. Seed source temperature control parameters
    Number of testsPulse width/ns
    11.054
    21.135
    31.339
    41.413
    51.829
    62.296
    72.858
    83.065
    93.541
    104.540
    Table 4. 10 groups of pulse idth values
    ParameterTypical
    Peak output power700 mW
    Peak output current2.2 A
    Peak wavelength1 064 nm
    Minimum rising edge time1.6 ns
    Peak pulse width500 ns
    Table 5. Operating parameters of LD
    Yi LI, Wenlong WEN, Qianhao WANG, Qianglong LI, Hualong ZHAO, Feng LI. Sub-nanosecond Rising-edge Narrow Pulse Driver Circuit and Analog Simulation[J]. Acta Photonica Sinica, 2024, 53(10): 1014002
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