• Infrared Technology
  • Vol. 44, Issue 9, 904 (2022)
Hongfei ZHANG1、*, Xubo ZHU2、3、4, Mo LI2、3、4, Guansheng YAO2、3、4, and Yanqiu LYU2、3、4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: Cite this Article
    ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology, 2022, 44(9): 904 Copy Citation Text show less
    References

    [1] Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578.

    [4] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545.

    [7] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807.

    [8] SUN Y, HAN X, HAO H, et al. 320×256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.

    [9] GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.

    [10] Haddadi A, Dehzangi A, Chevallier R, et al. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1.xSbx/AlAs1.xSbx type–II superlattices[J]. Scientific Reports, 2017, 7(1): 3379.

    [14] GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.

    [15] PENG R, JIAO S, JIANG D, et al. Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice[J]. Thin Solid Films, 2017, 629: 55-59.

    [16] Tribolet P, Destefanis G, Ballet P, et al. Advanced HgCdTe technologies and dual-band developments[C]//Infrared Technology and Applications XXXIV. International Society for Optics and Photonics, 2008, 6940:69402P.

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    [21] Hlund L, von Wtemberg R M, Gatty H, et al. Type-II InAs/GaSb superlattices for dual color infrared detection[C]//Quantum Sensing and Nano Electronics and Photonics XIV. International Society for Optics and Photonics, 2017, 10111: 1011116.

    [22] Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J].

    [23] Rehm R, Walther M, Rutz F, et al. Dual-color InAs/GaSb superlattice focal-plane array technology[J]. Journal of Electronic Materials, 2011, 40(8): 1738-1743.

    [26] HUANG J, MA W, ZHANG Y, et al. Two-colorni bin type II superlattice infrared photodetector with external quantum efficiency larger than 100%[J]. IEEE Electron Device Letters, 2017, 38(9): 1266-1269.

    ZHANG Hongfei, ZHU Xubo, LI Mo, YAO Guansheng, LYU Yanqiu. Research Progress of Mid-/Mid-Wavelength Dual-color Antimonide-based Infrared Detector[J]. Infrared Technology, 2022, 44(9): 904
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