We have produced ohmic contact on the surface of n-GaAs using a pusled Q-Switched ruby laser (A=0.6943m), a pulsed Q-Switched YAG laser(A=1.06m)and a frequency doutled pulsed YAG laser (A=0.53m). The specific contact resistance of alloyed Au-Ga-Ni contacts has been measured on the surfaces of n-GaAs. The experimental results show that the use of laser alloying forms more uniform ohmic contacts. The contacts possess electrical properties and surface conditions which are superior to those formed by conventional bulk-heating.