Ultrafast pulse lasers based on two-dimensinal nanomaterials

Cong Wang; Jie Liu; Han Zhang

doi:10.7498/aps.68.20190751

Journals >Acta Physica Sinica >Volume 68 >Issue 18 >Page 188101-1 > Article

Acta Physica Sinica
Vol. 68, Issue 18, 188101-1 (2019)

Ultrafast pulse lasers based on two-dimensinal nanomaterials

Cong Wang¹, Jie Liu^1、*, and Han Zhang^2、*

Author Affiliations

¹School of Physics and Electronics, Shandong Normal University, Jinan 250014, china

²College of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China

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DOI: 10.7498/aps.68.20190751 Cite this Article

Cong Wang, Jie Liu, Han Zhang. Ultrafast pulse lasers based on two-dimensinal nanomaterials[J]. Acta Physica Sinica, 2019, 68(18): 188101-1 Copy Citation Text

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Fig. 1. Schematic illustration of different kinds of typical ultrathin two-dimensional nanomaterials ^[7]. 不同类型的二维纳米材料示意图^[7]

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Atomic structures and band structures of graphene (a), (b) [8], MoS2 (c), (d) [8], Bi2Se3 (e), (f)[10] and BP (g), (h)[8]. Reprinted by permission from Ref. [8]. Copyright 2014 Nature Publishing Group. Reprinted by permission from Ref. [10]. Copyright 2009 Nature Publishing Group.石墨烯(a), (b) [8], MoS2 (c), (d) [8], Bi2Se3 (e), (f) [10]和BP (g), (h)[8]的原子结构和带隙结构

Fig. 2. Atomic structures and band structures of graphene (a), (b) ^[8], MoS₂ (c), (d) ^[8], Bi₂Se₃ (e), (f)^[10] and BP (g), (h)^[8]. Reprinted by permission from Ref. [8]. Copyright 2014 Nature Publishing Group. Reprinted by permission from Ref. [10]. Copyright 2009 Nature Publishing Group. 石墨烯(a), (b) ^[8], MoS₂ (c), (d) ^[8], Bi₂Se₃ (e), (f) ^[10]和BP (g), (h)^[8]的原子结构和带隙结构

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Fig. 3. Fabrication methods of two-dimensional materials.二维材料的制备方法

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Fig. 4. (a) Schematic of the Z-scan measurement setup with permission from Ref. [18] © The Optical Society. (b) Schematic of the two-arm measurement setup. Reprinted by permission from Ref. [19]. Copyright 2017 Nature Publishing Group. 　(a) Z-scan法实验装置^[18]; (b) 双臂测量法实验装置^[19]

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Fig. 5. Incorporation schemes for two-dimensional materials: (a) Transferring two-dimensional materials on quartz; (b) transferring two-dimensional materials on high reflection mirror; (c) sandwiching structure; transferring or depositing SA on (d) fiber end, (e) tapered fiber and (f) D-typed fiber.二维材料的耦合方式　(a) 二维材料转移至石英片上; (b) 二维材料转移至高反镜上; (c) 三明治结构, 二维材料转移至光纤端面 (d)、锥形光纤(e)和D型光纤(f)

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Fig. 6. (a) Scattergram of pulse width and repetition rate of fiber lasers. (b) Intensity autocorrelation trace, fitted with a sech² profile. Both seed and compressed traces are normalized to 1. Selected from Ref. [20]. (c) Measured oscilloscope traces of the 212th-harmonic-output optical pulses with permission from Ref. [21] © The Optical Society. (d) Measured autocorrelation traces of the output pulses at the maximum harmonic order with permission from Ref. [21] © The Optical Society. (e) Typical oscilloscope pulse trains of mode-locking. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verlag. (f) Autocorrelation trace with a sech² fitting. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verla. 　(a) 光纤激光器的脉宽和重复频率分布图; (b) 种子源和压缩脉冲的自相关曲线^[20]; (c), (d) 212阶谐波锁模脉冲输出序列和自相关曲线^[21]; (e), (f)锁模脉冲序列和自相关曲线^[103]

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Fig. 7. (a) Layered BP solution; (b) nonlinear transmission of BP SA; (c) passively mode-locked Ho³⁺/Pr³⁺ co-doped fluoride fiber laser; (d) autocorrelation trace of the mode-locked pulses. Reprinted by permission from Ref. [179]. Copyright 2016 Nature Publishing Group. (a) 黑磷纳米片溶液; (b) 黑磷饱和吸收体的非线性曲线; (c) Ho³⁺/Pr³⁺共掺的被动锁模光纤激光器; (d)锁模脉冲的自相关曲线^[179]

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Material type		Fabrication method	λ/nm	Pulse width	Repetition rate	Energy	Ref.
注: LPE, liquid-phase exfoliation; CVD, chemical vapor deposition; ME, mechanical exfoliation; MS, magnetron sputtering; PLD, pulsed laser deposition; HM, hydrothermal method; DFT, direct fusion technique; PM, polyol method; G, graphene; GO, graphene oxide.
G	G	CVD	1069.8	580 ps	0.9 MHz	0.41 nJ	[26]
		CVD	1559.12	432.47 fs	25.51 MHz	0.09 nJ	[27]
		CVD	1565.3	148 fs	101 MHz	15 pJ	[28]
		CVD	1545	88 fs	21.15 MHz	71 pJ	[29]
		CVD	1531.3	1.21 ps	1.88 MHz	—	[30]
		CVD	1559.34	345 fs	54.28 MHz	38.7 pJ	[31]
		CVD	1561	1.23 ps	2.54 MHz	—	[32]
		CVD	1576	415 fs	6.84 MHz	7.3 nJ	[33]
		LPE	1550	29 fs	18.67 MHz	2.8 nJ	[20]
		ME	1567	220 fs	15.7 MHz	83 pJ	[34]
		—	1554	168 fs	63 MHz	55 pJ	[35]
		ME	1560	900 fs	2.22 GHz	—	[22]
		—	1560	992 fs	0.49 GHz	—	[36]
		LPE	1525—1559	1 ps	8 MHz	125 pJ	[37]
		CVD	1945	205 fs	58.87 MHz	220 pJ	[38]
		—	2060	190 fs	20.98 MHz	2.55 nJ	[39]
		CVD	2780	42 ps	25.4 MHz	0.7 nJ	[40]
	GO	—	1556.5	615 fs	17.09 MHz	—	[41]
	Graphene-Bi₂Te₃	CVD	1565.6	1.17 ps	6.91 MHz	—	[42]
TIs	Bi₂Se₃	PM	1031.7	46 ps	44.6 MHz	0.76 nJ	[43]
		PM	1600	360 fs	35.45 MHz	24.3 pJ	[44]
		PM	1557.5	660 fs	12.5 MHz	0.14 nJ	[45]
		LPE	1571	579 fs	12.54 MHz	127 pJ	[46]
		LPE	1559	245 fs	202.7 MHz	37 nJ	[47]
		HM	1610	0.7 ns	640.9 MHz	481 pJ	[48]
		PM	1557—1565	1.57 ps	1.21 MHz	—	[49]
		LPE	1567/1568	22 ps	8.83 MHz	1.1 nJ	[50]
	Bi₂Te₃	ME	1057.82	230 ps	1.44 MHz	0.6 nJ	[51]
		HM	1064.47	960 ps	1.11 MHz	—	[52]
		ME	1547	600 fs	15.11 MHz	53 pJ	[53]
		PLD	1560.8	286 fs	18.55 MHz	0.03 nJ	[54]
		HM	1557	1100 fs	8.635 MHz	29 pJ	[55]
		PLD	1562.4	320 fs	2.95 GHz	—	[24]
		—	1557.4	3.42 ps	388 MHz	—	[56]
		ME	1935	795 fs	27.9 MHz	36 pJ	[57]
		—	1909.5	1.26 ps	21.5 MHz	—	[58]
	Sb₂Te₃	LPE	1556	449 fs	22.13 MHz	39.6 pJ	[59]
		ME	1564	125 fs	22.4 MHz	44.6 pJ	[60]
		ME	1561	270 fs	34.58 MHz	0.03 nJ	[61]
		DFT	1568.6	195 fs	33 MHz	0.27 nJ	[62]
		ME	1565	128 fs	22.32 MHz	45 pJ	[15]
		MS	1558	167 fs	25.38 MHz	0.21 nJ	[63]
		PLD	1542	70 fs	95.4 MHz	—	[23]
TMDs	WS₂	MS	1560	288 fs	41.4 MHz	0.04 pJ	[64]
		LPE	1550	595 fs	—	—	[65]
		PLD	1560	220 fs	—	—	[66]
		LPE	1561/1563	369/563	24.93/20.39 MHz	70/136 pJ	[67]
		CVD	1565	332 fs	31.11 MHz	14 pJ	[68]
		PLD	1559.7	452 fs	1.04 GHz	10.9 pJ
		PLD	1558.54	585—605 fs	8.83 MHz	1.14 nJ	[66]
		LPE	1941	1.3 ps	34.8 MHz	172 pJ	[69]
	MoS₂	HM	1054.3	800 ps	7 MHz	1.3 nJ	[70]
		HM	1569.5	710 fs	12.09 MHz	0.147 nJ	[71]
		ME	1550	200 fs	14.53 MHz	—	[72]
		PLD	1561	246 fs	101.4 MHz	1.2 nJ	[73]
		LPE	1573.7	630 fs	27.1 MHz	0.141 nJ	[74]
		HM	1556.8	3 ps	2.5 GHz	2 pJ	[75]
		LPE	1530.4	1.2 ps	125 MHz	344 pJ	[76]
		LPE	1555.6	737 fs	3.27 GHz	7 pJ	[21]
		LPE	1535—1565	0.96—7.1 ps	12.99 MHz	—	[77]
		MS	1915.5	1.25 ps	18.72 MHz	—	[78]
	WSe₂	CVD	1557.4	163.5 fs	63.13 MHz	451 pJ	[79]
	WSe₂	CVD	1863.96	1.16 ps	11.36 MHz	2.9 nJ	[80]
	MoSe₂	LPE	1912	920 fs	18.21 MHz	—	[81]
	SnS₂	LPE	1062.66	656 ps	39.33 MHz	57 pJ	[82]
	SnS₂	LPE	1562.01	623 fs	29.33 MHz	41 pJ	[83]
	ReS₂	CVD	1564	1.25 ps	3.43 MHz	—	[84]
	ReS₂	LPE	1558.6	1.6 ps	5.48 MHz	73 pJ	[85]
BP		ME	1085.5	7.54 ps	13.5 MHz	5.93 nJ	[86]
		LPE	1030.6	400 ps	46.3 MHz	0.70 nJ	[87]
		LPE	1555	102 fs	23.9 MHz	0.08 nJ	[25]
		LPE	1562	1236 fs	5.426 MHz	—	[88]
		LPE	1549—1575	280 fs	60.5 MHz	—	[89]
		ME	1560.7	570 fs	6.88 MHz	0.74 nJ	[16]
		LPE	1559.5	670 fs	8.77 MHz	—	[90]
		ME	1558.7	786 fs	14.7 MHz	0.11 nJ	[91]
		ME	1571.4	946 fs	5.96 MHz	—	[14]
		ME	1560.5	272 fs	28.2 MHz	2.3 nJ	[92]
		LPE	1532—1570	940 fs	4.96 MHz	1.1 nJ	[93]
		LPE	1562.8	291 fs	10.36 MHz	—	[94]
		LPE	1562	635 fs	12.5 MHz	—	[95]
		LPE	1555	687 fs	37.8 MHz	—	[96]
		LPE	1561.7	882 fs	5.47 MHz	—
		LPE	1533	—	20.82 MHz	0.07 nJ	[97]
		ME	1910	739 fs	36.8 MHz	0.05 nJ	[98]
		LPE	1898	1580 fs	19.2 MHz	440 pJ	[99]
		LPE	2094	1300 fs	290 MHz	0.39 nJ	[100]

Table 1.

Performance summary of mode-locked fiber lasers based on graphene, TIs, TMDs and BP.

基于石墨烯、TIs、TMDs、BP的锁模光纤激光器的性能总结

Material type		Fabrication methods	λ	Pulse width	Repetation rate	Energy	Ref.
注: SM, solvothermal method; TEM, thermal evaporation method.
G	G	—	1075 nm	70 ns	257 kHz	46 nJ	[107]
		—	1192.6 nm	800 ps	111 kHz	0.44 μJ	[106]
		CVD	1560 nm	2.06 μs	73.06 kHz	93.7 nJ	[108]
		HM	1561 nm	4.0 μs	27.2 kHz	29 nJ	[109]
		LPE	1555 nm	2 μs	103 kHz	40 nJ	[110]
		—	2.78 μm	2.9 μs	37.2 kHz	1.67 μJ	[111]
	GO	—	1558 nm	2.3 μs	123.5 kHz	1.68 nJ	[112]
		CVD	1044 nm	1.7 μs	215 kHz	8.37 μJ	[113]
		—	2032 nm	3.8 μs	45 kHz	6.71 μJ	[114]
TIs	Bi₂Se₃	LPE	604 nm	494 ns	187.4 kHz	3.1 nJ	[115]
		LPE	635 nm	244 ns	454.5 kHz	22.3 nJ	[116]
		LPE	1.06 μm	1.95 μs	29.1 kHz	17.9 nJ	[117]
		HM	1562.27 nm	1.6 μs	53.7 kHz	0.08 nJ	[118]
		PM	1.5 μm	13.4 μs	12.88 kHz	13.3 nJ	[119]
		LPE	1.55 μm	2.54 μs	212 kHz	—	[120]
		LPE	1530.3 nm	24 μs	40.1 kHz	39.8 nJ	[121]
		LPE	1.98 μm	4.18 μs	26.8 kHz	313 nJ	[122]
	Bi₂Te₃	ME	1559 nm	4.88 μs	21.24 kHz	89.9 nJ	[123]
		SM	1557.5 nm	3.71 μs	49.40 kHz	2.8 μJ	[124]
		LPE	1.5 μm	13 μs	12.82 kHz	1.5 μJ	[125]
		ME	1.56 μm	2.81 μs	42.8 kHz	12.7 nJ	[126]
	Sb₂Te₃	MS	1530—1570 nm	400 ns	338 kHz	18 nJ	[127]
	SnS₂	—	1532.7 nm	510 ns	233 kHz	40 nJ	[128]
TMDs	MoS₂	LPE	604 nm	602 ns	118.4 kHz	5.5 nJ	[129]
		LPE	635 nm	200 ns	512 kHz	28.7 nJ	[130]
		LPE	1030—1070 nm	2.88 μs	89 kHz	126 nJ	[131]
		HM	1.56 μm	3.2 μs	91.7 kHz	17 nJ	[132]
		TEM	1550—1575 nm	6 μs	22 kHz	150 nJ	[133]
		CVD	1529—1570 nm	1.92 μs	114.8 kHz	8.2 nJ	[134]
		LPE	1519—1567 nm	3.3 μs	43.47 kHz	160 nJ	[135]
		PLD	1549.8 nm	660 ns	131 kHz	152 nJ	[136]
		CVD	1549.9 nm	1.66 μs	173 kHz	27.2 nJ	[137]
		LPE	1550 nm	9.92 μs	41.45 kHz	184 nJ	[138]
		LPE	1.06 μm	5.8 μs	28.9 kHz	32.6 nJ	[139]
			1.56 μm	5.4 μs	27 kHz	63.2 nJ
			2.03 μm	1.76 μs	48.1 kHz	1 μJ
TMDs	WS₂	LPE	604 nm	435 ns	132.2 kHz	6.4 nJ	[129]
		CVD	1027—1065 nm	1.65 μs	97 kHz	—	[140]
		LPE	1030 nm	3.2 μs	36.7 kHz	13.6 nJ	[141]
		LPE	1.5 μm	0.71 μs	134 kHz	19 nJ	[142]
		LPE	1558 nm	1.1 μs	97 kHz	179 nJ	[141]
		LPE	1547.5 nm	958 ns	120 kHz	44 nJ	[143]
		LPE	1550 nm	3.966 μs	77.92 kHz	1.2 μJ	[138]
TDMs	MoSe₂	LPE	635.4 nm	240 ns	555 kHz	11.1 nJ	[130]
		LPE	1060 nm	2.8 μs	60 kHz	116 nJ
		LPE	1566 nm	4.8 μs	35.4 kHz	825 nJ	[144]
		LPE	1924 nm	5.5 μs	21.8 kHz	42 nJ
		LPE	1550 nm	4.04 μs	66.8 kHz	369 nJ	[138]
	WSe₂	LPE	1550 nm	4.06 μs	85.36 kHz	485 nJ	[138]
	WSe₂	LPE	1560 nm	3.1 μs	49.6 kHz	33.2 nJ	[145]
	TiSe₂	CVD	1530 nm	1.12 μs	154 kHz	75 nJ	[146]
BP		LPE	635 nm	383 ns	409.8 kHz	27.6 nJ	[147]
		ME	1064.7 nm	2.0 μs	76 kHz	17.8 nJ	[148]
		ME	1.0 μm	1.16 μs	58.73 kHz	2.09 nJ	[149]
		LPE	1.5 μm	1.36 μs	82.64 kHz	148 nJ	[150]
		ME	1561 nm	2.96 μs	34.32 kHz	194 nJ	[151]
		ME	1562.8 nm	10.32 μs	15.78 kHz	94.3 nJ	[14]
		LPE	1912 nm	731 μs	113.3 kHz	632 nJ	[152]

Table 2.

Performance summary of Q-switched fiber lasers based on graphene, TIs, TMDs and BP.

基于石墨烯、TIs、TMDs、BP的调Q光纤激光器的性能总结

Material	Fabrication method	Integration substrate	Bulk laser crystal	Center wavelength	Pulse width	Repetition rate	Output power	Ref.
注: VEM, vertical evaporation method; SCCA, spin coating–coreduction approach; DM, dielectric mirror; HRM, high reflective mirror.
G	CVD	Quartz	Ti:Sapphire	800 nm	63 fs	99.4 MHz	480 mW	[154]
	LPE	Quartz	Yb:YAG	1064 nm	4 ps	88 MHz	100 mW	[155]
	CVD	GM	Yb:YCOB	1.0 μm	152 fs	—	—	[156]
	CVD	Quartz	Yb:SC₂SiO₅	1062.8 nm	14 ps	90.7 MHz	480 mW	[157]
	VEM	Quartz	Nd:YVO4	1064 nm	8.8 ps	84 MHz	3.06 W	[158]
	CVD	Sapphire	Yb:KGW	1032 nm	325 fs	66.3 MHz	1.78 W	[159]
	LPE	DM	Nd:GdVO₄	1064 nm	16 ps	43 MHz	360 mW	[160]
	CVD	Glass	Yb:Y:CaF₂	1051 nm	4.8 ps	60 MHz	370 mW	[161]
	CVD	Glass	Yb:Y₂SiO₅	1042.6 nm	883 fs	87 MHz	1 W	[162]
	LPE	DM	Yb:KGW	1031.1 nm	428 fs	86 MHz	504 mW	[163]
	LPE	DM	Nd;GdVO₄	1.34 μm	11 ps	100 MHz	1.29 W	[164]
	CVD	Quartz	Cr:YAG	1516 nm	91 fs	—	100 mW	[165]
	CVD	GM	Tm:CLNGG	2.0 μm	354 fs	—	NA	[156]
	CVD	DM	Tm:CLNGG	2014.4 nm	882 fs	95 MHz	60 mW	[166]
	LPE	Quartz	Tm:YAP	2023 nm	< 10 ps	71.8 MHz	268 mW	[167]
	CVD	HRM	Cr:ZnS	2400 nm	41 fs	108 MHz	250 mW	[168]
	CVD	HRM	Tm:CLNGG	2018 nm	729 fs	98.7 MHz	178 mW	[169]
	CVD	Quartz	Tm:YAP	1988 nm	—	62.38 MHz	256 mW	[170]
GO	VEM	Quartz	Nd:GdVO₄	1064 nm	4.5 ps	70 MHz	1.1 W	[171]
GO	VEM	Quartz	Yb:Y₂SiO₅	1059 nm	763 fs	94 MHz	700 mW	[172]
Bi₂Te₃	SCCA	Sapphire	Nd:YVO₄	1064 nm	8 ps	0.98 GHz	180 mW	[173]
MoS₂	PLD	Quartz	Pr:GdLiF₄	522 nm	46 ps	101.4 MHz	10 mW	[153]
MoS₂/G	PLD	HRM	Yb:KYW	1037.2 nm	236 fs	41.84 MHz	550 mW	[174]
MoS₂/GO	LPE	DM	Nd:GdVO₄	1064 nm	17 ps	1.02 GHz	508 mW	[175]
BP	LPE	DM	Nd:GdVO₄	1064 nm	6.1 ps	140 MHz	460 mW	[176]
	LPE	HRM	Yb,Lu:CALGO	1053.4 nm	272 fs	63.3 MHz	820 mW	[177]
	LPE	Quartz	Nd;GdVO₄	1.34 μm	9.24 ps	58.14 MHz	350 mW	[178]
	LPE	—	Ho,Pr:ZBLAN	2.8 μm	8.6 ps	13.98 MHz	87.8 mW	[179]

Table 3.

Performance summary of mode-locked solid-state lasers based on graphene, TIs, TMDs and BP.

基于石墨烯、TIs、TMDs、BP的锁模固体激光器的性能总结

Material		Fabrication method	Integration substrate	Bulk laser crystal	Center wavelength	Pulse width	Repitition rate	Output power	Ref.
注: SGM, sulfidation grown method; GM, gold mirror.
G		—	Quartz	Ho:YAG	2097 nm	2.6 μs	64 kHz	264 mW	[180]
		—	Quartz	Tm:LGGG	2003 nm	1.29μs	43.9 kHz	140 mW	[181]
		EG	SiC	Cr:ZnSe	2.4 μm	157 ns	169 kHz	256 mW	[182]
		CVD	CaF₂	Er:Y₂O₃	2.7 μm	296 ns	44.2 kHz	114 mW	[183]
		—	HRM	Er:ZBLAN	2.78 μm	2.9 μs	37 kHz	62 mW	[111]
		CVD	Quartz	Er:CaF₂	2.8 μm	1.3 μs	62.7 kHz	172 mW	[184]
		CVD	Sapphire	Ho,Pr:LLF	2.95 μm	937 ns	55.7 kHz	172 mW	[185]
		LPE	HRM	Ho:ZBLAN	3.0 μm	1.2 μs	92 kHz	102 mW	[186]
GO		LPE	—	Tm:Y:CaF₂	1969 nm	1.32μs	20.2 kHz	400 mW	[187]
GO		LPE	Quartz	Tm:YLF	1928 nm	1.0 μs	38 kHz	379 mW	[188]
TIs	Bi₂Te₃	LPE	Quartz	Tm:LuAG	2023.6 nm	620 ns	118 kHz	2.03 W	[189]
	Bi₂Te₃	HEM	CaF₂	Ho:ZBLAN	2.979 μm	1.4 μs	81.96 kHz	327 mW	[190]
	Bi₂Te₃/G	SM	SiO₂	Tm:YAP	1980 nm	238 ns	108 kHz	2.34 W	[191]
	Bi₂Te₃/G	SM	SiO₂	Er:YSGG	2796 nm	243 ns	88 kHz	110 mW	[191]
TMDs	MoS₂	PLD	Quartz	Tm:Ho:YGG	2.1 μm	410 ns	149 kHz	206 mW	[192]
		PLD	GM	Tm:CLNGG	1979 nm	4.8 μs	110 kHz	62 mW	[193]
		LPE	DM	Tm:CYAO	1850 nm	0.5 μs	84.9 kHz	490 mW	[194]
		LPE	Glass	Tm,Ho:YAP	2129 nm	435 ns	55 kHz	275 mW	[195]
		LPE	YAG	Er:Lu₂O₃	2.84 μm	335 ns	121 kHz	1.03 W	[196]
		CVD	YAG	Ho,Pr:LLF	2.95 μm	621 ns	85.8 kHz	70 mW	[197]
		—	—	Tm:GdVO₄	1902 nm	0.8 μs	49.1 kHz	100 mW	[198]
	MoS₂/BP	LPE	SAMs	Tm:YAP	1993 nm	488 ns	86 kHz	3.6 W	[199]
	ReS₂	LPE	Sapphire	Er:YSGG	2.8 μm	324 ns	126 kHz	104 mW	[200]
	ReS₂	LPE	YAG	Er:SrF₂	2.79 μm	508 ns	49 kHz	580 mW	[201]
	WS₂	TD	SiO₂	Tm:LuAG	2.0 μm	660 ns	62 kHz	1.08 W	[202]
		SGM	HRM	Ho³⁺/Pr³⁺:ZBLAN	2.86 μm	1.73 us	131 kHz	48 mW	[203]
		LPE	YAG	Ho,Pr,LLF	2.95 μm	654 ns	90.4 kHz	82 mW	[204]
BP		ME	Quartz	Tm:Ho:YAG	2.1 μm	636 ns	122 kHz	27 mW	[205]
		LPE	Quartz	Tm:YAP	1988 nm	1.8 us	19.3 kHz	151 mW	[206]
		LPE	DM	Tm:YAP	1969 nm	181 ns	81 kHz	3.1 W	[207]
		ME	HRM	Tm:YAG	2 μm	3.12 us	11.6 kHz	38 mW	[208]
		LPE	—	Ho:ZBLAN	2.9 μm	2.4 μs	62.5 kHz	309 mW	[179]
		LPE	DM	Cr:ZnSe	2.4 μm	189 ns	176 kHz	36 mW	[209]
		LPE	—	Er:CaF₂	2.8 μm	955 ns	41.9 kHz	178 mW	[210]
		LPE	GM	Tm:CaYAlO₄	1.93 μm	3.1 μs	17.7 kHz	12 mW	[211]
		LPE	GM	Er:Y₂O₃	2.72 μm	4.5 μs	12.6 kHz	6 mW	[211]
		LPE	Silicon	Er:SrF₂	2.79 μm	702 ns	77 kHz	180 mW	[212]
		LPE	—	Er:ZBLAN	2.8 μm	1.2 μs	63 kHz	485 mW	[213]
		LPE	Silicon	Er:CaF₂	2.8 μm	955 ns	41.9 kHz	178 mW	[210]
		LPE	CaF₂	Ho,Pr:LLF	2.95 μm	194 ns	159 kHz	385 mW	[214]

Table 4.

Performance summary of Q-switched solid-state lasers based on graphene, TIs, TMDs and BP at the wavelength of 2－3 μm.

在2—3 μm波段下, 基于石墨烯、TIs、TMDs、BP的调Q固体激光器的性能总结

Cong Wang, Jie Liu, Han Zhang. Ultrafast pulse lasers based on two-dimensinal nanomaterials[J]. Acta Physica Sinica, 2019, 68(18): 188101-1

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